Inventor

HARAN BALASUBRAMANIAN P

US2 patents

Patents

2 patents

US10177240B2Jan 8, 2019

FinFET device formed by a replacement metal-gate method including a gate cut-last step

IBM15 citations83

US10381458B2Aug 13, 2019

Semiconductor device replacement metal gate with gate cut last in RMG

IBM3 citations71