Inventor

Yu xiong-fei

TW63 patents

⚠️ This page may combine multiple inventors who share the name “Yu xiong-fei”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

Yu xiong-fei

TAIWAN SEMICONDUCTOR MFG CO LTD

Multiple gate field-effect transistors having oxygen-scavenged gate stack

Passivator for gate dielectric

Techniques providing metal gate devices with multiple barrier layers

FinFET doping methods and structures thereof

Triple layer high-k gate dielectric stack for workfunction engineering

Method for patterning a lanthanum containing layer

Method for manufacturing semiconductor device

Method for patterning a lanthanum containing layer

Semiconductor device and method of manufacturing the same

Method for patterning a lanthanum containing layer

FinFET doping methods and structures thereof

Techniques providing metal gate devices with multiple barrier layers

Methods of annealing after deposition of gate layers

Non-conformal oxide liner and manufacturing methods thereof

Passivator for gate dielectric

Non-conformal oxide liner and manufacturing methods thereof

Method of modifying capping layer in semiconductor structure

Replacement gate methods that include treating spacers to widen gate

Gate structures in semiconductor devices

Semiconductor device

Semiconductor device and method of manufacture

Semiconductor device and method

Non-conformal oxide liner and manufacturing methods thereof

Fin field effect transistor having conformal and non-conformal gate dielectric layers

Gate structures in semiconductor devices

Semiconductor device and method

Semiconductor device and method of manufacture

Semiconductor device

Method for patterning a lanthanum containing layer

Methods of forming semiconductor devices and FinFET devices having shielding layers

Replacement gate methods that include treating spacers to widen gate

Replacement gate methods that include treating spacers to widen gate

Techniques providing metal gate devices with multiple barrier layers

Buffer layer on semiconductor devices

Techniques providing metal gate devices with multiple barrier layers

Multiple gate field effect transistors having oxygen-scavenged gate stack

Method of forming a semiconductor device comprising titanium silicon oxynitride

Multiple gate field-effect transistors having oxygen-scavenged gate stack

Method of forming metal gate electrode

TAIWAN SEMICONDUCTOR MFG

Methods for a gate replacement process

Techniques providing metal gate devices with multiple barrier layers

Systems and methods for annealing semiconductor device structures using microwave radiation

Methods for a gate replacement process

Method of fabricating a gate dielectric layer

Metal gate electrode of a field effect transistor

TSAI CHUN HSIUNG

Methods of anneal after deposition of gate layers

CHEN JIAN-HAO

Method of fabricating a plurality of gate structures

LEE DA-YUAN

Method of fabricating high-k/metal gate device

Yu xiong-fei

Techniques providing metal gate devices with multiple barrier layers

LEE WEI-YANG

Method for fabricating a gate dielectric layer