P

Inventor

HSU KUANG-YUAN

TW82 patents
⚠️ This page may combine multiple inventors who share the name “HSU KUANG-YUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

26 patents
US9859386B2Jan 2, 2018

Self aligned contact scheme

TAIWAN SEMICONDUCTOR MFG CO LTD496 citations99
US9548366B1Jan 17, 2017

Self aligned contact scheme

TAIWAN SEMICONDUCTOR MFG CO LTD583 citations99
US11053584B2Jul 6, 2021

System and method for supplying a precursor for an atomic layer deposition (ALD) process

TAIWAN SEMICONDUCTOR MFG CO LTD278 citations98
US9852947B1Dec 26, 2017

Forming sidewall spacers using isotropic etch

TAIWAN SEMICONDUCTOR MFG CO LTD28 citations94
US10153351B2Dec 11, 2018

Semiconductor device and a method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD14 citations92
US11171134B2Nov 9, 2021

Techniques providing metal gate devices with multiple barrier layers

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US10529553B2Jan 7, 2020

Treatment system and method

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10312075B2Jun 4, 2019

Treatment system and method

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9941373B2Apr 10, 2018

Metal gate structure

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9449832B2Sep 20, 2016

Metal gate structure

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US9431505B2Aug 30, 2016

Method of making a gate structure

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10867789B2Dec 15, 2020

Treatment to control deposition rate

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10796898B2Oct 6, 2020

Treatment system and method

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10714586B2Jul 14, 2020

Semiconductor device and a method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10651283B2May 12, 2020

Metal gate structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10443127B2Oct 15, 2019

System and method for supplying a precursor for an atomic layer deposition (ALD) process

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10388515B2Aug 20, 2019

Treatment to control deposition rate

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US9831243B2Nov 28, 2017

Techniques providing metal gate devices with multiple barrier layers

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9685444B2Jun 20, 2017

Semiconductor device with metal gate

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9659776B2May 23, 2017

Doping for FinFET

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11670500B2Jun 6, 2023

Treatment system and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11342177B2May 24, 2022

Treatment to control deposition rate

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11227929B2Jan 18, 2022

Metal gate structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12014922B2Jun 18, 2024

Apparatus for manufacturing a thin film and a method therefor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11569362B2Jan 31, 2023

Semiconductor device and a method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11244822B2Feb 8, 2022

Apparatus for manufacturing a thin film and a method therefor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

TAIWAN SEMICONDUCTOR MFG

10 patents

LIM PENG-SOON

3 patents

LEE DA-YUAN

3 patents

CHEN JIAN-HAO

2 patents

TSAU HSUEH WEN

1 patent

Yu xiong-fei

1 patent

HSU KUANG-YUAN

1 patent

PLAYNITRIDE DISPLAY CO LTD

1 patent

LEE WEI-YANG

1 patent

WISTRON NEWEB CORP

1 patent

Showing the top 50 of 82 patents by PatentIndex Score.