P

Inventor

YANG CHE-WEI

TW36 patents
⚠️ This page may combine multiple inventors who share the name “YANG CHE-WEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

21 patents
US9711607B1Jul 18, 2017

One-dimensional nanostructure growth on graphene and devices thereof

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US12027554B2Jul 2, 2024

Composite deep trench isolation structure in an image sensor

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations74
US10832957B2Nov 10, 2020

Method for direct forming stressor, semiconductor device having stressor, and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10516050B2Dec 24, 2019

Method for forming stressor, semiconductor device having stressor, and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12593682B2Mar 31, 2026

Three dimensional MIM capacitor having a comb structure and methods of making the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12503769B2Dec 23, 2025

Semiconductor processing tool and methods of operation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12500093B2Dec 16, 2025

Composite particulates for use as part of a supporting fill mixture in a semicondutor substrate stacking application

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11715770B2Aug 1, 2023

Forming semiconductor structures with semimetal features

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11626320B2Apr 11, 2023

Method for manufacturing semiconductor device, method for packaging semiconductor chip, method for manufacturing shallow trench isolation (STI)

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11538938B2Dec 27, 2022

Method for forming stressor, semiconductor device having stressor, and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11164972B2Nov 2, 2021

Method for forming stressor, semiconductor device having stressor, and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11152251B2Oct 19, 2021

Method for manufacturing semiconductor device having via formed by ion beam

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10957602B2Mar 23, 2021

Method for direct forming stressor, semiconductor device having stressor, and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12272715B2Apr 8, 2025

High reflectance isolation structure to increase image sensor performance

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10854724B2Dec 1, 2020

One-dimensional nanostructure growth on graphene and devices thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10510611B2Dec 17, 2019

Method for direct forming stressor, semiconductor device having stressor, and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10347538B2Jul 9, 2019

Method for direct forming stressor, semiconductor device having stressor, and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10134865B2Nov 20, 2018

One-dimensional nanostructure growth on graphene and devices thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12519020B2Jan 6, 2026

Semiconductor processing tool and methods of operation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12340987B2Jun 24, 2025

Tunable plasma exclusion zone in semiconductor fabrication

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10504999B2Dec 10, 2019

Forming semiconductor structures with semimetal features

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51

PRIMAX ELECTRONICS LTD

14 patents

PRIMAX ELETRONICS LITD

1 patent