Inventor
ROIZIN YAKOV
IL69 patents
⚠️ This page may combine multiple inventors who share the name “ROIZIN YAKOV”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOWER SEMICONDUCTOR LTD
44 patentsUS9917104B1Mar 13, 2018
Hybrid MOS-PCM CMOS SOI switch
TOWER SEMICONDUCTOR LTD89 citations98
US7227234B2Jun 5, 2007
Embedded non-volatile memory cell with charge-trapping sidewall spacers
TOWER SEMICONDUCTOR LTD58 citations96
US9514818B1Dec 6, 2016
Memristor using parallel asymmetrical transistors having shared floating gate and diode
TOWER SEMICONDUCTOR LTD27 citations94
US7390718B2Jun 24, 2008
SONOS embedded memory with CVD dielectric
TOWER SEMICONDUCTOR LTD59 citations94
US8378407B2Feb 19, 2013
Floating gate inverter type memory cell and array
TOWER SEMICONDUCTOR LTD175 citations93
US6788576B2Sep 7, 2004
Complementary non-volatile memory cell
TOWER SEMICONDUCTOR LTD46 citations93
US6297984B1Oct 2, 2001
Structure and method for protecting integrated circuits during plasma processing
TOWER SEMICONDUCTOR LTD19 citations93
US7948020B2May 24, 2011
Asymmetric single poly NMOS non-volatile memory cell
TOWER SEMICONDUCTOR LTD20 citations92
US7859043B2Dec 28, 2010
Three-terminal single poly NMOS non-volatile memory cell
TOWER SEMICONDUCTOR LTD23 citations92
US7800156B2Sep 21, 2010
Asymmetric single poly NMOS non-volatile memory cell
TOWER SEMICONDUCTOR LTD30 citations92
US6703298B2Mar 9, 2004
Self-aligned process for fabricating memory cells with two isolated floating gates
TOWER SEMICONDUCTOR LTD33 citations88
US10707120B1Jul 7, 2020
SOI devices with air gaps and stressing layers
TOWER SEMICONDUCTOR LTD28 citations86
US8344468B2Jan 1, 2013
Photovoltaic device with lateral P-I-N light-sensitive diodes
TOWER SEMICONDUCTOR LTD9 citations84
US9330748B2May 3, 2016
High-speed compare operation using magnetic tunnel junction elements including two different anti-ferromagnetic layers
TOWER SEMICONDUCTOR LTD12 citations83
US8722496B1May 13, 2014
Method for making embedded cost-efficient SONOS non-volatile memory
TOWER SEMICONDUCTOR LTD14 citations83
US7608837B2Oct 27, 2009
High resolution integrated X-ray CMOS image sensor
TOWER SEMICONDUCTOR LTD13 citations81
US8829332B1Sep 9, 2014
Photovoltaic device formed on porous silicon isolation
TOWER SEMICONDUCTOR LTD7 citations78
US7700994B2Apr 20, 2010
Single poly CMOS logic memory cell for RFID application and its programming and erasing method
TOWER SEMICONDUCTOR LTD12 citations78
US7679119B2Mar 16, 2010
CMOS inverter based logic memory
TOWER SEMICONDUCTOR LTD11 citations78
US10083771B2Sep 25, 2018
Radioisotope power source embedded in electronic devices
TOWER SEMICONDUCTOR LTD2 citations73
US7400538B2Jul 15, 2008
NROM memory device with enhanced endurance
TOWER SEMICONDUCTOR LTD8 citations73
US9984269B1May 29, 2018
Fingerprint sensor with direct recording to non-volatile memory
TOWER SEMICONDUCTOR LTD5 citations72
US9729810B2Aug 8, 2017
Image sensor pixel with memory node having buried channel and diode portions
TOWER SEMICONDUCTOR LTD2 citations72
US7060627B2Jun 13, 2006
Method of decreasing charging effects in oxide-nitride-oxide (ONO) memory arrays
TOWER SEMICONDUCTOR LTD7 citations72
US9082867B2Jul 14, 2015
Embedded cost-efficient SONOS non-volatile memory
TOWER SEMICONDUCTOR LTD4 citations71
US7754564B2Jul 13, 2010
Method for fabricating three-dimensional control-gate architecture for single poly EPROM memory devices in planar CMOS technology
TOWER SEMICONDUCTOR LTD7 citations71
US7671396B2Mar 2, 2010
Three-dimensional control-gate architecture for single poly EPROM memory devices fabricated in planar CMOS technology
TOWER SEMICONDUCTOR LTD7 citations70
US11231510B1Jan 25, 2022
Radiation sensor
TOWER SEMICONDUCTOR LTD4 citations69
US7795087B2Sep 14, 2010
Ultra-violet protected tamper resistant embedded EEPROM
TOWER SEMICONDUCTOR LTD7 citations69
US8828781B1Sep 9, 2014
Method for producing photovoltaic device isolated by porous silicon
TOWER SEMICONDUCTOR LTD6 citations67
US11843043B2Dec 12, 2023
Method of forming a GaN sensor having a controlled and stable threshold voltage in the sensing area
TOWER SEMICONDUCTOR LTD2 citations65
US9741817B2Aug 22, 2017
Method for manufacturing a trench metal insulator metal capacitor
TOWER SEMICONDUCTOR LTD5 citations65
US7016225B2Mar 21, 2006
Four-bit non-volatile memory transistor and array
TOWER SEMICONDUCTOR LTD10 citations65
US7482233B2Jan 27, 2009
Embedded non-volatile memory cell with charge-trapping sidewall spacers
TOWER SEMICONDUCTOR LTD3 citations63
US12353012B1Jul 8, 2025
Method for manufacturing an optical switching system
TOWER SEMICONDUCTOR LTD0 citations62
US12353017B1Jul 8, 2025
Optical switching system
TOWER SEMICONDUCTOR LTD0 citations62
US8344440B2Jan 1, 2013
Three-terminal single poly NMOS non-volatile memory cell with shorter program/erase times
TOWER SEMICONDUCTOR LTD3 citations62
US11644580B2May 9, 2023
High resolution radiation sensor based on single polysilicon floating gate array
TOWER SEMICONDUCTOR LTD0 citations61
US11353597B2Jun 7, 2022
High resolution radiation sensor based on single polysilicon floating gate array
TOWER SEMICONDUCTOR LTD0 citations61
US7754559B2Jul 13, 2010
Method for fabricating capacitor structures using the first contact metal
TOWER SEMICONDUCTOR LTD4 citations60
US7439575B2Oct 21, 2008
Protection against in-process charging in silicon-oxide-nitride-oxide-silicon (SONOS) memories
TOWER SEMICONDUCTOR LTD3 citations60
US6959920B2Nov 1, 2005
Protection against in-process charging in silicon-oxide-nitride-oxide-silicon (SONOS) memories
TOWER SEMICONDUCTOR LTD3 citations60
US11374120B2Jun 28, 2022
Apparatus, system and method of an electrostatically formed nanowire (EFN)
TOWER SEMICONDUCTOR LTD0 citations57
US11195933B2Dec 7, 2021
Method of forming a GaN sensor having a controlled and stable threshold voltage
TOWER SEMICONDUCTOR LTD1 citations55
ROIZIN YAKOV
3 patentsUS8599616B2Dec 3, 2013
Three-dimensional NAND memory with stacked mono-crystalline channels
ROIZIN YAKOV23 citations91
US8501609B2Aug 6, 2013
Method for generating a three-dimensional NAND memory with mono-crystalline channels using sacrificial material
ROIZIN YAKOV27 citations91
US8501573B2Aug 6, 2013
High-resolution integrated X-ray CMOS image sensor
ROIZIN YAKOV4 citations60
UNIV RAMOT
1 patentTOWER SEMICONDUCTORS LTD
1 patentEDREI ITZHAK
1 patentShowing the top 50 of 69 patents by PatentIndex Score.