Inventor
CAI JR XIUYU
US2 patents
Patents
2 patentsUS8524592B1Sep 3, 2013
Methods of forming semiconductor devices with self-aligned contacts and low-k spacers and the resulting devices
XIE RUILONG70 citations96
US8541274B1Sep 24, 2013
Methods of forming 3-D semiconductor devices with a nanowire gate structure wherein the nanowire gate structure is formed after source/drain formation
XIE RUILONG39 citations93