P

Inventor

BUCKLEY JULIEN

FR22 patents
⚠️ This page may combine multiple inventors who share the name “BUCKLEY JULIEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

COMMISSARIAT ENERGIE ATOMIQUE

19 patents
US10211305B2Feb 19, 2019

Normally-off hetrojunction transistor with high threshold voltage

COMMISSARIAT ENERGIE ATOMIQUE4 citations69
US11489067B2Nov 1, 2022

Electron gas transistor, one-piece device comprising at least two transistors in cascode and associated manufacturing methods

COMMISSARIAT ENERGIE ATOMIQUE2 citations65
US11316009B2Apr 26, 2022

Electronic power device with super-junction

COMMISSARIAT ENERGIE ATOMIQUE2 citations65
US11398547B2Jul 26, 2022

Junction barrier Schottky diode

COMMISSARIAT ENERGIE ATOMIQUE0 citations61
US9028138B2May 12, 2015

Electronic device

COMMISSARIAT ENERGIE ATOMIQUE2 citations60
US7927888B2Apr 19, 2011

Method to fabricate a chip for the detection of biological elements

COMMISSARIAT ENERGIE ATOMIQUE3 citations60
US12550399B2Feb 10, 2026

Field effect transistor with p-FET type behaviour

COMMISSARIAT ENERGIE ATOMIQUE0 citations59
US11158629B2Oct 26, 2021

Polarization circuit of a power component

COMMISSARIAT ENERGIE ATOMIQUE0 citations59
US10283499B2May 7, 2019

Heterojunction diode having an increased non-repetitive surge current

COMMISSARIAT ENERGIE ATOMIQUE1 citations58
US10879383B2Dec 29, 2020

High electron mobility transistor and method of fabrication having reduced gate length and leak current

COMMISSARIAT ENERGIE ATOMIQUE1 citations55
US12218254B2Feb 4, 2025

Semiconductor diode and method of manufacturing such a diode

COMMISSARIAT ENERGIE ATOMIQUE0 citations50
US11063165B2Jul 13, 2021

Optocoupler

COMMISSARIAT ENERGIE ATOMIQUE0 citations50
US12527057B2Jan 13, 2026

Micro-electronic device with insulated substrate, and associated manufacturing method

COMMISSARIAT ENERGIE ATOMIQUE0 citations49
US11838016B2Dec 5, 2023

Transistor association

COMMISSARIAT ENERGIE ATOMIQUE0 citations49
US11824000B2Nov 21, 2023

Field effect transistor and associated manufacturing method

COMMISSARIAT ENERGIE ATOMIQUE0 citations49
US11189716B2Nov 30, 2021

Open type heterojunction transistor having a reduced transition resistance

COMMISSARIAT ENERGIE ATOMIQUE0 citations48
US12278224B2Apr 15, 2025

Method for producing nitride mesas each intended to form an electronic or optoelectronic device

COMMISSARIAT ENERGIE ATOMIQUE0 citations47
US10651845B2May 12, 2020

Inverter branch driver

COMMISSARIAT ENERGIE ATOMIQUE0 citations40
US10002769B2Jun 19, 2018

Method for functionalizing a solid substrate, other than a substrate made of gold, via specific chemical compounds

COMMISSARIAT ENERGIE ATOMIQUE0 citations38

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT

1 patent

COMMISSARIAT L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

1 patent

BUCKLEY JULIEN

1 patent