Inventor
BUCKLEY JULIEN
FR22 patents
⚠️ This page may combine multiple inventors who share the name “BUCKLEY JULIEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
COMMISSARIAT ENERGIE ATOMIQUE
19 patentsUS10211305B2Feb 19, 2019
Normally-off hetrojunction transistor with high threshold voltage
COMMISSARIAT ENERGIE ATOMIQUE4 citations69
US11489067B2Nov 1, 2022
Electron gas transistor, one-piece device comprising at least two transistors in cascode and associated manufacturing methods
COMMISSARIAT ENERGIE ATOMIQUE2 citations65
US11316009B2Apr 26, 2022
Electronic power device with super-junction
COMMISSARIAT ENERGIE ATOMIQUE2 citations65
US11398547B2Jul 26, 2022
Junction barrier Schottky diode
COMMISSARIAT ENERGIE ATOMIQUE0 citations61
US9028138B2May 12, 2015
Electronic device
COMMISSARIAT ENERGIE ATOMIQUE2 citations60
US7927888B2Apr 19, 2011
Method to fabricate a chip for the detection of biological elements
COMMISSARIAT ENERGIE ATOMIQUE3 citations60
US12550399B2Feb 10, 2026
Field effect transistor with p-FET type behaviour
COMMISSARIAT ENERGIE ATOMIQUE0 citations59
US11158629B2Oct 26, 2021
Polarization circuit of a power component
COMMISSARIAT ENERGIE ATOMIQUE0 citations59
US10283499B2May 7, 2019
Heterojunction diode having an increased non-repetitive surge current
COMMISSARIAT ENERGIE ATOMIQUE1 citations58
US10879383B2Dec 29, 2020
High electron mobility transistor and method of fabrication having reduced gate length and leak current
COMMISSARIAT ENERGIE ATOMIQUE1 citations55
US12218254B2Feb 4, 2025
Semiconductor diode and method of manufacturing such a diode
COMMISSARIAT ENERGIE ATOMIQUE0 citations50
US11063165B2Jul 13, 2021
Optocoupler
COMMISSARIAT ENERGIE ATOMIQUE0 citations50
US12527057B2Jan 13, 2026
Micro-electronic device with insulated substrate, and associated manufacturing method
COMMISSARIAT ENERGIE ATOMIQUE0 citations49
US11838016B2Dec 5, 2023
Transistor association
COMMISSARIAT ENERGIE ATOMIQUE0 citations49
US11824000B2Nov 21, 2023
Field effect transistor and associated manufacturing method
COMMISSARIAT ENERGIE ATOMIQUE0 citations49
US11189716B2Nov 30, 2021
Open type heterojunction transistor having a reduced transition resistance
COMMISSARIAT ENERGIE ATOMIQUE0 citations48
US12278224B2Apr 15, 2025
Method for producing nitride mesas each intended to form an electronic or optoelectronic device
COMMISSARIAT ENERGIE ATOMIQUE0 citations47
US10651845B2May 12, 2020
Inverter branch driver
COMMISSARIAT ENERGIE ATOMIQUE0 citations40
US10002769B2Jun 19, 2018
Method for functionalizing a solid substrate, other than a substrate made of gold, via specific chemical compounds
COMMISSARIAT ENERGIE ATOMIQUE0 citations38