Inventor
IGUCHI KENICHI
JP29 patents
⚠️ This page may combine multiple inventors who share the name “IGUCHI KENICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJI ELECTRIC CO LTD
19 patentsUS9825145B2Nov 21, 2017
Method of manufacturing silicon carbide semiconductor device including forming an electric field control region by a laser doping technology
FUJI ELECTRIC CO LTD2 citations73
US10727060B2Jul 28, 2020
Doping system, doping method and method for manufacturing silicon carbide semiconductor device
FUJI ELECTRIC CO LTD2 citations72
US10658183B2May 19, 2020
Impurity adding apparatus, impurity adding method, and semiconductor element manufacturing method
FUJI ELECTRIC CO LTD2 citations72
US9779968B2Oct 3, 2017
Method for processing semiconductor substrate and method for manufacturing semiconductor device in which said processing method is used
FUJI ELECTRIC CO LTD3 citations72
US9716008B2Jul 25, 2017
Apparatus for doping impurities, method for doping impurities, and method for manufacturing semiconductor device
FUJI ELECTRIC CO LTD2 citations72
US9659774B2May 23, 2017
Impurity introducing method, impurity introducing apparatus, and method of manufacturing semiconductor element
FUJI ELECTRIC CO LTD3 citations72
US9564334B2Feb 7, 2017
Method of manufacturing a semiconductor device
FUJI ELECTRIC CO LTD2 citations71
US9548205B2Jan 17, 2017
Method of manufacturing a semiconductor device
FUJI ELECTRIC CO LTD2 citations71
US11069779B2Jul 20, 2021
Silicon carbide semiconductor device and method for manufacturing the same
FUJI ELECTRIC CO LTD0 citations62
US11245010B2Feb 8, 2022
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD0 citations52
US10109501B2Oct 23, 2018
Manufacturing method of semiconductor device having a voltage resistant structure
FUJI ELECTRIC CO LTD0 citations52
US9786749B2Oct 10, 2017
Semiconductor device having a voltage resistant structure
FUJI ELECTRIC CO LTD0 citations52
US11264240B2Mar 1, 2022
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD0 citations51
US10453687B2Oct 22, 2019
Method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD0 citations51
US9972499B2May 15, 2018
Method for forming metal-semiconductor alloy using hydrogen plasma
FUJI ELECTRIC CO LTD1 citations51
US9892919B2Feb 13, 2018
Semiconductor device manufacturing method
FUJI ELECTRIC CO LTD1 citations51
US9577032B2Feb 21, 2017
Semiconductor device
FUJI ELECTRIC CO LTD0 citations51
US9355858B2May 31, 2016
Method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD0 citations51
US10559664B2Feb 11, 2020
Method of manufacturing semiconductor device by removing a bulk layer to expose an epitaxial-growth layer and by removing portions of a supporting-substrate to expose portions of the epitaxial-growth layer
FUJI ELECTRIC CO LTD0 citations41
KOA CORP
4 patentsUS12493010B2Dec 9, 2025
Gas sensor
KOA CORP0 citations61
US11977042B2May 7, 2024
Gas sensor and method for manufacturing same
KOA CORP0 citations61
US11370671B2Jun 28, 2022
Zinc oxide varistor
KOA CORP0 citations57
US11370712B2Jun 28, 2022
Zinc oxide varistor and method for manufacturing same
KOA CORP0 citations57