P

Inventor

IGUCHI KENICHI

JP29 patents
⚠️ This page may combine multiple inventors who share the name “IGUCHI KENICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FUJI ELECTRIC CO LTD

19 patents
US9825145B2Nov 21, 2017

Method of manufacturing silicon carbide semiconductor device including forming an electric field control region by a laser doping technology

FUJI ELECTRIC CO LTD2 citations73
US10727060B2Jul 28, 2020

Doping system, doping method and method for manufacturing silicon carbide semiconductor device

FUJI ELECTRIC CO LTD2 citations72
US10658183B2May 19, 2020

Impurity adding apparatus, impurity adding method, and semiconductor element manufacturing method

FUJI ELECTRIC CO LTD2 citations72
US9779968B2Oct 3, 2017

Method for processing semiconductor substrate and method for manufacturing semiconductor device in which said processing method is used

FUJI ELECTRIC CO LTD3 citations72
US9716008B2Jul 25, 2017

Apparatus for doping impurities, method for doping impurities, and method for manufacturing semiconductor device

FUJI ELECTRIC CO LTD2 citations72
US9659774B2May 23, 2017

Impurity introducing method, impurity introducing apparatus, and method of manufacturing semiconductor element

FUJI ELECTRIC CO LTD3 citations72
US9564334B2Feb 7, 2017

Method of manufacturing a semiconductor device

FUJI ELECTRIC CO LTD2 citations71
US9548205B2Jan 17, 2017

Method of manufacturing a semiconductor device

FUJI ELECTRIC CO LTD2 citations71
US11069779B2Jul 20, 2021

Silicon carbide semiconductor device and method for manufacturing the same

FUJI ELECTRIC CO LTD0 citations62
US11245010B2Feb 8, 2022

Semiconductor device and method of manufacturing semiconductor device

FUJI ELECTRIC CO LTD0 citations52
US10109501B2Oct 23, 2018

Manufacturing method of semiconductor device having a voltage resistant structure

FUJI ELECTRIC CO LTD0 citations52
US9786749B2Oct 10, 2017

Semiconductor device having a voltage resistant structure

FUJI ELECTRIC CO LTD0 citations52
US11264240B2Mar 1, 2022

Semiconductor device and method of manufacturing semiconductor device

FUJI ELECTRIC CO LTD0 citations51
US10453687B2Oct 22, 2019

Method of manufacturing semiconductor device

FUJI ELECTRIC CO LTD0 citations51
US9972499B2May 15, 2018

Method for forming metal-semiconductor alloy using hydrogen plasma

FUJI ELECTRIC CO LTD1 citations51
US9892919B2Feb 13, 2018

Semiconductor device manufacturing method

FUJI ELECTRIC CO LTD1 citations51
US9577032B2Feb 21, 2017

Semiconductor device

FUJI ELECTRIC CO LTD0 citations51
US9355858B2May 31, 2016

Method of manufacturing semiconductor device

FUJI ELECTRIC CO LTD0 citations51
US10559664B2Feb 11, 2020

Method of manufacturing semiconductor device by removing a bulk layer to expose an epitaxial-growth layer and by removing portions of a supporting-substrate to expose portions of the epitaxial-growth layer

FUJI ELECTRIC CO LTD0 citations41

KOA CORP

4 patents

YOSHIKAWA KOH

1 patent

UNIV KYUSHU NAT UNIV CORP

1 patent

WAKIMOTO HIROKI

1 patent

NATIONAL INSTITUTE OF TECH

1 patent

UNIV NAGAOKA TECHNOLOGY

1 patent

TAKEMOTO OIL & FAT CO LTD

1 patent