Inventor

KARDASZ Bartlomiej Adam

US34 patents

⚠️ This page may combine multiple inventors who share the name “KARDASZ Bartlomiej Adam”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KARDASZ Bartlomiej Adam

SPIN MEMORY INC

Switching and stability control for perpendicular magnetic tunnel junction device

Precessional spin current structure with non-magnetic insertion layer for MRAM

Perpendicular magnetic tunnel junction device with skyrmionic enhancement layers for the precessional spin current magnetic layer

Perpendicular magnetic tunnel junction device with skyrmionic assist layers for free layer switching

High annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory

Precessional spin current structure with high in-plane magnetization for MRAM

Spin transfer torque structure for MRAM devices having a spin current injection capping layer

Perpendicular magnetic tunnel junction having improved reference layer stability

Perpendicular magnetic tunnel junction device with precessional spin current layer having a modulated moment density

Method for manufacturing magnetic memory element with post pillar formation annealing

Perpendicular magnetic tunnel junction retention and endurance improvement

Magnetic tunnel junction (MTJ) memory device having a composite free magnetic layer

Methods for manufacturing a perpendicular magnetic tunnel junction (p-MTJ) MRAM having a precessional spin current injection (PSC) structure

Precessional spin current structure for MRAM

Antiferromagnetic exchange coupling enhancement in perpendicular magnetic tunnel junction stacks for magnetic random access memory applications

Magnetic memory having a pinning synthetic antiferromagnetic structure (SAF) with cobalt over platinum (Pt/Co) bilayers

Method of manufacturing high annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory

Method for manufacturing a magnetic memory device by pre-patterning a bottom electrode prior to patterning a magnetic material

INTEGRATED SILICON SOLUTION CAYMAN INC

High retention storage layer using ultra-low RA MgO process in perpendicular magnetic tunnel junctions for MRAM devices

Precessional spin current structure with non-magnetic insertion layer for MRAM

High retention storage layer using ultra-low RA MgO process in perpendicular magnetic tunnel junctions for MRAM devices

Precessional spin current structure for MRAM

Precessional spin current structure with nonmagnetic insertion layer for MRAM

Method for manufacturing a magnetic random-access memory device using post pillar formation annealing

Method for manufacturing a magnetic random-access memory device using post pillar formation annealing

Precessional spin current structure for magnetic random access memory with novel capping materials

Magnetic memory chip having nvm class and SRAM class MRAM elements on the same chip

SPIN TRANSFER TECH INC

Spin transfer torque structure for MRAM devices having a spin current injection capping layer

MRAM with reduced stray magnetic fields

Precessional spin current structure for MRAM

Spin transfer torque structure for MRAM devices having a spin current injection capping layer

Perpendicular magnetic tunnel junction device with offset precessional spin current layer

Method for combining NVM class and SRAM class MRAM elements on the same chip

Magnetic tunnel junction memory element with improved reference layer stability for magnetic random access memory application