Inventor

KIM BYEUNG CHUL

US34 patents

⚠️ This page may combine multiple inventors who share the name “KIM BYEUNG CHUL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KIM BYEUNG CHUL

MICRON TECHNOLOGY INC

Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assemblies

Method used in forming integrated circuitry

Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assemblies

Integrated assemblies having improved charge migration

Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies

Electronic devices comprising adjoining oxide materials and related systems

Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies

Electronic devices comprising adjoining oxide materials and related systems

Microelectronic devices including stack structures having air gaps, and related memory devices, electronic systems, and methods

Integrated assemblies having vertically-extending channel material with alternating regions of different dopant distributions, and methods of forming integrated assemblies

Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies

Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies

Integrated assemblies having vertically-extending channel material with alternating regions of different dopant distributions, and methods of forming integrated assemblies

Methods of forming an apparatus for making semiconductor dieves

Selective cavity merging for isolation regions in a memory die

Integrated circuitry comprising an array, method of forming an array, method of forming DRAM circuitry, and method used in the fabrication of integrated circuitry

Merged cavities and buried etch stops for three-dimensional memory arrays

Integrated assemblies and methods of forming integrated assemblies

Integrated circuitry comprising an array, method of forming an array, method of forming DRAM circuitry, and method used in the fabrication of integrated circuitry

Memory apparatus and methods including merged process for memory cell pillar and source structure

Electronic devices comprising segmented high-k dielectric materials and storage node materials, related systems, and methods of forming

SAMSUNG ELECTRONICS CO LTD

Method for manufacturing NAND type mask-ROM having improved cell current

Method of forming contact pads in a semiconductor device and a semiconductor device formed using the method

Method of fabricating interconnect lines and plate electrodes of a storage capacitor in a semiconductor device

Method for forming contact hole of semiconductor device

Method for manufacturing a bipolar junction transistor having a polysilicon emitter

Current amplification type mask-ROM

Variable resistance memory device and method of manufacturing the same

Nand type non-volatile memory device

Method of fabricating interconnect lines and plate electrodes of a storage capacitor in a semiconductor device

LODESTAR LICENSING GROUP LLC

Methods of forming integrated assemblies with improved charge migration impedance

Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assemblies

KIM BYEUNG CHUL

Method of manufacturing a variable resistance memory device

KIM DEOK-KEE

Semiconductor devices and electronic systems