Inventor
FABREGUETTE FRANCOIS H
US15 patents
⚠️ This page may combine multiple inventors who share the name “FABREGUETTE FRANCOIS H”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
14 patentsUS10777576B1Sep 15, 2020
Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assemblies
MICRON TECHNOLOGY INC12 citations85
US11037956B2Jun 15, 2021
Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assemblies
MICRON TECHNOLOGY INC4 citations83
US11715692B2Aug 1, 2023
Microelectronic devices including conductive rails, and related methods
MICRON TECHNOLOGY INC2 citations73
US11672118B2Jun 6, 2023
Electronic devices comprising adjoining oxide materials and related systems
MICRON TECHNOLOGY INC2 citations72
US11107830B2Aug 31, 2021
Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies
MICRON TECHNOLOGY INC3 citations72
US11672120B2Jun 6, 2023
Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assemblies
MICRON TECHNOLOGY INC2 citations69
US12557289B2Feb 17, 2026
Electronic devices comprising adjoining oxide materials and related systems
MICRON TECHNOLOGY INC0 citations62
US12525534B2Jan 13, 2026
Memory devices including conductive rails, and related methods and electronic systems
MICRON TECHNOLOGY INC0 citations62
US11631697B2Apr 18, 2023
Integrated assemblies having vertically-extending channel material with alternating regions of different dopant distributions, and methods of forming integrated assemblies
MICRON TECHNOLOGY INC0 citations62
US11557608B2Jan 17, 2023
Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies
MICRON TECHNOLOGY INC0 citations62
US11289501B2Mar 29, 2022
Integrated assemblies having vertically-extending channel material with alternating regions of different dopant distributions, and methods of forming integrated assemblies
MICRON TECHNOLOGY INC0 citations62
US10964536B2Mar 30, 2021
Formation of an atomic layer of germanium in an opening of a substrate material having a high aspect ratio
MICRON TECHNOLOGY INC0 citations62
US10937654B2Mar 2, 2021
Methods of doping a silicon-containing material and methods of forming a semiconductor device
MICRON TECHNOLOGY INC0 citations62
US11127830B2Sep 21, 2021
Apparatus with multidielectric spacers on conductive regions of stack structures, and related methods
MICRON TECHNOLOGY INC0 citations46