Inventor
SHIN CHUNG HWAN
KR13 patents
⚠️ This page may combine multiple inventors who share the name “SHIN CHUNG HWAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
10 patentsUS9786764B2Oct 10, 2017
Fin-FET semiconductor device with a source/drain contact having varying different widths
SAMSUNG ELECTRONICS CO LTD10 citations83
US10886361B2Jan 5, 2021
Semiconductor devices including resistor structures
SAMSUNG ELECTRONICS CO LTD5 citations81
US10366955B2Jul 30, 2019
Semiconductor device including conductive structure having nucleation structure and method of forming the same
SAMSUNG ELECTRONICS CO LTD1 citations72
US11367651B2Jun 21, 2022
Semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations71
US12165916B2Dec 10, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations61
US12396184B2Aug 19, 2025
Semiconductor devices including resistor structures
SAMSUNG ELECTRONICS CO LTD0 citations59
US11804516B2Oct 31, 2023
Semiconductor devices including resistor structures
SAMSUNG ELECTRONICS CO LTD0 citations59
US10847464B2Nov 24, 2020
Semiconductor device including conductive structure having nucleation structure and method of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US10580736B2Mar 3, 2020
Semiconductor device including conductive structure having nucleation structure and method of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US11923426B2Mar 5, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations50