Inventor
MIN SUN KI
KR22 patents
⚠️ This page may combine multiple inventors who share the name “MIN SUN KI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
18 patentsUS10128240B2Nov 13, 2018
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD21 citations93
US10483373B2Nov 19, 2019
Semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations72
US10186615B2Jan 22, 2019
Semiconductor device
SAMSUNG ELECTRONICS CO LTD5 citations71
US10109738B2Oct 23, 2018
Semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations71
US9847421B2Dec 19, 2017
Semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations71
US12218131B2Feb 4, 2025
Semiconductor device including gate separation region
SAMSUNG ELECTRONICS CO LTD0 citations62
US11942477B2Mar 26, 2024
Semiconductor device including gate separation region
SAMSUNG ELECTRONICS CO LTD0 citations62
US11600617B2Mar 7, 2023
Semiconductor device including gate separation region
SAMSUNG ELECTRONICS CO LTD0 citations62
US10256318B2Apr 9, 2019
Method of manufacturing semiconductor device to prevent defects
SAMSUNG ELECTRONICS CO LTD1 citations62
US11004732B2May 11, 2021
Method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations61
US12170281B2Dec 17, 2024
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US12237386B2Feb 25, 2025
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US12080798B2Sep 3, 2024
Semiconductor devices and methods for manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US12040275B2Jul 16, 2024
Semiconductor device including via plug connected to source/drain pattern
SAMSUNG ELECTRONICS CO LTD0 citations51
US10854601B2Dec 1, 2020
Semiconductor device including gate separation region
SAMSUNG ELECTRONICS CO LTD0 citations51
US10381265B2Aug 13, 2019
Method of manufacturing semiconductor device with interlayer insulating layers
SAMSUNG ELECTRONICS CO LTD0 citations51
US12166093B2Dec 10, 2024
Semiconductor devices including epitaxial patterns with plurality of fin-shaped patterns
SAMSUNG ELECTRONICS CO LTD0 citations50
US10818657B2Oct 27, 2020
Semiconductor device and method for controlling gate profile using thin film stress in gate last process
SAMSUNG ELECTRONICS CO LTD0 citations39