P

Inventor

MIN SUN KI

KR22 patents
⚠️ This page may combine multiple inventors who share the name “MIN SUN KI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

18 patents
US10128240B2Nov 13, 2018

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD21 citations93
US10483373B2Nov 19, 2019

Semiconductor device

SAMSUNG ELECTRONICS CO LTD4 citations72
US10186615B2Jan 22, 2019

Semiconductor device

SAMSUNG ELECTRONICS CO LTD5 citations71
US10109738B2Oct 23, 2018

Semiconductor device

SAMSUNG ELECTRONICS CO LTD3 citations71
US9847421B2Dec 19, 2017

Semiconductor device

SAMSUNG ELECTRONICS CO LTD2 citations71
US12218131B2Feb 4, 2025

Semiconductor device including gate separation region

SAMSUNG ELECTRONICS CO LTD0 citations62
US11942477B2Mar 26, 2024

Semiconductor device including gate separation region

SAMSUNG ELECTRONICS CO LTD0 citations62
US11600617B2Mar 7, 2023

Semiconductor device including gate separation region

SAMSUNG ELECTRONICS CO LTD0 citations62
US10256318B2Apr 9, 2019

Method of manufacturing semiconductor device to prevent defects

SAMSUNG ELECTRONICS CO LTD1 citations62
US11004732B2May 11, 2021

Method of manufacturing semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations61
US12170281B2Dec 17, 2024

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD1 citations52
US12237386B2Feb 25, 2025

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US12080798B2Sep 3, 2024

Semiconductor devices and methods for manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US12040275B2Jul 16, 2024

Semiconductor device including via plug connected to source/drain pattern

SAMSUNG ELECTRONICS CO LTD0 citations51
US10854601B2Dec 1, 2020

Semiconductor device including gate separation region

SAMSUNG ELECTRONICS CO LTD0 citations51
US10381265B2Aug 13, 2019

Method of manufacturing semiconductor device with interlayer insulating layers

SAMSUNG ELECTRONICS CO LTD0 citations51
US12166093B2Dec 10, 2024

Semiconductor devices including epitaxial patterns with plurality of fin-shaped patterns

SAMSUNG ELECTRONICS CO LTD0 citations50
US10818657B2Oct 27, 2020

Semiconductor device and method for controlling gate profile using thin film stress in gate last process

SAMSUNG ELECTRONICS CO LTD0 citations39

FCI INC

2 patents

MIN SUN-KI

1 patent

SAMSUNG ELECTRO MECH

1 patent