P

Inventor

ALAM SYED M

US110 patents
⚠️ This page may combine multiple inventors who share the name “ALAM SYED M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

EVERSPIN TECHNOLOGIES INC

44 patents
US9697880B2Jul 4, 2017

Self-referenced read with offset current in a memory

EVERSPIN TECHNOLOGIES INC20 citations92
US9575125B1Feb 21, 2017

Memory device with reduced test time

EVERSPIN TECHNOLOGIES INC22 citations92
US8923041B2Dec 30, 2014

Self-referenced sense amplifier for spin torque MRAM

EVERSPIN TECHNOLOGIES INC22 citations92
US9911481B1Mar 6, 2018

Selection circuit with autobooting for magnetic memory and methods therefor

EVERSPIN TECHNOLOGIES INC7 citations84
US9847116B2Dec 19, 2017

Circuit and method for controlling MRAM cell bias voltages

EVERSPIN TECHNOLOGIES INC5 citations84
US9697879B2Jul 4, 2017

Memory device with shared read/write circuitry

EVERSPIN TECHNOLOGIES INC7 citations84
US9542989B2Jan 10, 2017

Circuit and method for controlling MRAM cell bias voltages

EVERSPIN TECHNOLOGIES INC5 citations84
US9529672B2Dec 27, 2016

ECC word configuration for system-level ECC compatibility

EVERSPIN TECHNOLOGIES INC5 citations84
US9530476B2Dec 27, 2016

Memory device with shared read/write circuitry

EVERSPIN TECHNOLOGIES INC5 citations84
US9502089B2Nov 22, 2016

Short detection and inversion

EVERSPIN TECHNOLOGIES INC5 citations84
US9418001B2Aug 16, 2016

Memory controller and method for interleaving DRAM and MRAM accesses

EVERSPIN TECHNOLOGIES INC5 citations84
US9336849B2May 10, 2016

Memory device with shared read/write circuitry

EVERSPIN TECHNOLOGIES INC8 citations84
US9336848B2May 10, 2016

Memory device with differential bit cells

EVERSPIN TECHNOLOGIES INC5 citations84
US9311980B1Apr 12, 2016

Word line supply voltage generator for a memory device and method therefore

EVERSPIN TECHNOLOGIES INC7 citations84
US9299411B2Mar 29, 2016

Hybrid read scheme for spin torque MRAM

EVERSPIN TECHNOLOGIES INC5 citations84
US9286218B2Mar 15, 2016

Word line auto-booting in a spin-torque magnetic memory having local source lines

EVERSPIN TECHNOLOGIES INC7 citations84
US9218865B2Dec 22, 2015

Self-referenced sense amplifier for spin torque MRAM

EVERSPIN TECHNOLOGIES INC10 citations84
US9196342B2Nov 24, 2015

Circuit and method for spin-torque MRAM bit line and source line voltage regulation

EVERSPIN TECHNOLOGIES INC7 citations84
US9183911B2Nov 10, 2015

Hybrid read scheme for spin torque MRAM

EVERSPIN TECHNOLOGIES INC9 citations84
US9183912B2Nov 10, 2015

Circuit and method for controlling MRAM cell bias voltages

EVERSPIN TECHNOLOGIES INC9 citations84
US9047965B2Jun 2, 2015

Circuit and method for spin-torque MRAM bit line and source line voltage regulation

EVERSPIN TECHNOLOGIES INC7 citations84
US9007811B1Apr 14, 2015

Word line driver circuit

EVERSPIN TECHNOLOGIES INC7 citations84
US8976610B2Mar 10, 2015

Memory device with timing overlap mode

EVERSPIN TECHNOLOGIES INC6 citations84
US8929132B2Jan 6, 2015

Write driver circuit and method for writing to a spin-torque MRAM

EVERSPIN TECHNOLOGIES INC8 citations84
US8817530B2Aug 26, 2014

Data-masked analog and digital read for resistive memories

EVERSPIN TECHNOLOGIES INC11 citations84
US9245611B2Jan 26, 2016

Method of writing to a spin torque magnetic random access memory

EVERSPIN TECHNOLOGIES INC4 citations83
US12020769B2Jun 25, 2024

Systems and methods for dual standby modes in memory

EVERSPIN TECHNOLOGIES INC1 citations73
US11757451B2Sep 12, 2023

Systems and methods for configuration of a configuration bit with a value

EVERSPIN TECHNOLOGIES INC2 citations73
US11651802B1May 16, 2023

Systems and methods for dual standby modes in memory

EVERSPIN TECHNOLOGIES INC1 citations73
US11637235B2Apr 25, 2023

In-plane spin orbit torque magnetoresistive stack/structure and methods therefor

EVERSPIN TECHNOLOGIES INC2 citations73
US11127896B2Sep 21, 2021

Shared spin-orbit-torque write line in a spin-orbit-torque MRAM

EVERSPIN TECHNOLOGIES INC4 citations73
US10650899B2May 12, 2020

Delayed write-back in memory with calibration support

EVERSPIN TECHNOLOGIES INC2 citations73
US10268591B2Apr 23, 2019

Delayed write-back in memory

EVERSPIN TECHNOLOGIES INC2 citations73
US10256840B2Apr 9, 2019

ECC word configuration for system-level ECC compatibility

EVERSPIN TECHNOLOGIES INC4 citations73
US10199122B2Feb 5, 2019

Short detection and inversion

EVERSPIN TECHNOLOGIES INC3 citations73
US10037790B2Jul 31, 2018

Word line auto-booting in a spin-torque magnetic memery having local source lines

EVERSPIN TECHNOLOGIES INC2 citations73
US10020041B1Jul 10, 2018

Self-referenced sense amplifier with precharge

EVERSPIN TECHNOLOGIES INC2 citations73
US9990300B2Jun 5, 2018

Delayed write-back in memory

EVERSPIN TECHNOLOGIES INC2 citations73
US9972373B2May 15, 2018

Self-referenced read with offset current in a memory

EVERSPIN TECHNOLOGIES INC3 citations73
US9881695B2Jan 30, 2018

Short detection and inversion

EVERSPIN TECHNOLOGIES INC2 citations73
US9569640B2Feb 14, 2017

Tamper detection and response in a memory device

EVERSPIN TECHNOLOGIES INC2 citations73
US9552849B2Jan 24, 2017

Memory device with timing overlap mode and precharge timing circuit

EVERSPIN TECHNOLOGIES INC3 citations73
US9543041B2Jan 10, 2017

Configuration and testing for magnetoresistive memory to ensure long term continuous operation

EVERSPIN TECHNOLOGIES INC4 citations73
US9401195B2Jul 26, 2016

Self-referenced sense amplifier for spin-torque MRAM

EVERSPIN TECHNOLOGIES INC3 citations73

ALAM SYED M

3 patents

IBM

2 patents

FREESCALE SEMICONDUCTOR INC

1 patent

Showing the top 50 of 110 patents by PatentIndex Score.