Inventor
ALAM SYED M
US110 patents
⚠️ This page may combine multiple inventors who share the name “ALAM SYED M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
EVERSPIN TECHNOLOGIES INC
44 patentsUS9697880B2Jul 4, 2017
Self-referenced read with offset current in a memory
EVERSPIN TECHNOLOGIES INC20 citations92
US9575125B1Feb 21, 2017
Memory device with reduced test time
EVERSPIN TECHNOLOGIES INC22 citations92
US8923041B2Dec 30, 2014
Self-referenced sense amplifier for spin torque MRAM
EVERSPIN TECHNOLOGIES INC22 citations92
US9911481B1Mar 6, 2018
Selection circuit with autobooting for magnetic memory and methods therefor
EVERSPIN TECHNOLOGIES INC7 citations84
US9847116B2Dec 19, 2017
Circuit and method for controlling MRAM cell bias voltages
EVERSPIN TECHNOLOGIES INC5 citations84
US9697879B2Jul 4, 2017
Memory device with shared read/write circuitry
EVERSPIN TECHNOLOGIES INC7 citations84
US9542989B2Jan 10, 2017
Circuit and method for controlling MRAM cell bias voltages
EVERSPIN TECHNOLOGIES INC5 citations84
US9529672B2Dec 27, 2016
ECC word configuration for system-level ECC compatibility
EVERSPIN TECHNOLOGIES INC5 citations84
US9530476B2Dec 27, 2016
Memory device with shared read/write circuitry
EVERSPIN TECHNOLOGIES INC5 citations84
US9502089B2Nov 22, 2016
Short detection and inversion
EVERSPIN TECHNOLOGIES INC5 citations84
US9418001B2Aug 16, 2016
Memory controller and method for interleaving DRAM and MRAM accesses
EVERSPIN TECHNOLOGIES INC5 citations84
US9336849B2May 10, 2016
Memory device with shared read/write circuitry
EVERSPIN TECHNOLOGIES INC8 citations84
US9336848B2May 10, 2016
Memory device with differential bit cells
EVERSPIN TECHNOLOGIES INC5 citations84
US9311980B1Apr 12, 2016
Word line supply voltage generator for a memory device and method therefore
EVERSPIN TECHNOLOGIES INC7 citations84
US9299411B2Mar 29, 2016
Hybrid read scheme for spin torque MRAM
EVERSPIN TECHNOLOGIES INC5 citations84
US9286218B2Mar 15, 2016
Word line auto-booting in a spin-torque magnetic memory having local source lines
EVERSPIN TECHNOLOGIES INC7 citations84
US9218865B2Dec 22, 2015
Self-referenced sense amplifier for spin torque MRAM
EVERSPIN TECHNOLOGIES INC10 citations84
US9196342B2Nov 24, 2015
Circuit and method for spin-torque MRAM bit line and source line voltage regulation
EVERSPIN TECHNOLOGIES INC7 citations84
US9183911B2Nov 10, 2015
Hybrid read scheme for spin torque MRAM
EVERSPIN TECHNOLOGIES INC9 citations84
US9183912B2Nov 10, 2015
Circuit and method for controlling MRAM cell bias voltages
EVERSPIN TECHNOLOGIES INC9 citations84
US9047965B2Jun 2, 2015
Circuit and method for spin-torque MRAM bit line and source line voltage regulation
EVERSPIN TECHNOLOGIES INC7 citations84
US9007811B1Apr 14, 2015
Word line driver circuit
EVERSPIN TECHNOLOGIES INC7 citations84
US8976610B2Mar 10, 2015
Memory device with timing overlap mode
EVERSPIN TECHNOLOGIES INC6 citations84
US8929132B2Jan 6, 2015
Write driver circuit and method for writing to a spin-torque MRAM
EVERSPIN TECHNOLOGIES INC8 citations84
US8817530B2Aug 26, 2014
Data-masked analog and digital read for resistive memories
EVERSPIN TECHNOLOGIES INC11 citations84
US9245611B2Jan 26, 2016
Method of writing to a spin torque magnetic random access memory
EVERSPIN TECHNOLOGIES INC4 citations83
US12020769B2Jun 25, 2024
Systems and methods for dual standby modes in memory
EVERSPIN TECHNOLOGIES INC1 citations73
US11757451B2Sep 12, 2023
Systems and methods for configuration of a configuration bit with a value
EVERSPIN TECHNOLOGIES INC2 citations73
US11651802B1May 16, 2023
Systems and methods for dual standby modes in memory
EVERSPIN TECHNOLOGIES INC1 citations73
US11637235B2Apr 25, 2023
In-plane spin orbit torque magnetoresistive stack/structure and methods therefor
EVERSPIN TECHNOLOGIES INC2 citations73
US11127896B2Sep 21, 2021
Shared spin-orbit-torque write line in a spin-orbit-torque MRAM
EVERSPIN TECHNOLOGIES INC4 citations73
US10650899B2May 12, 2020
Delayed write-back in memory with calibration support
EVERSPIN TECHNOLOGIES INC2 citations73
US10268591B2Apr 23, 2019
Delayed write-back in memory
EVERSPIN TECHNOLOGIES INC2 citations73
US10256840B2Apr 9, 2019
ECC word configuration for system-level ECC compatibility
EVERSPIN TECHNOLOGIES INC4 citations73
US10199122B2Feb 5, 2019
Short detection and inversion
EVERSPIN TECHNOLOGIES INC3 citations73
US10037790B2Jul 31, 2018
Word line auto-booting in a spin-torque magnetic memery having local source lines
EVERSPIN TECHNOLOGIES INC2 citations73
US10020041B1Jul 10, 2018
Self-referenced sense amplifier with precharge
EVERSPIN TECHNOLOGIES INC2 citations73
US9990300B2Jun 5, 2018
Delayed write-back in memory
EVERSPIN TECHNOLOGIES INC2 citations73
US9972373B2May 15, 2018
Self-referenced read with offset current in a memory
EVERSPIN TECHNOLOGIES INC3 citations73
US9881695B2Jan 30, 2018
Short detection and inversion
EVERSPIN TECHNOLOGIES INC2 citations73
US9569640B2Feb 14, 2017
Tamper detection and response in a memory device
EVERSPIN TECHNOLOGIES INC2 citations73
US9552849B2Jan 24, 2017
Memory device with timing overlap mode and precharge timing circuit
EVERSPIN TECHNOLOGIES INC3 citations73
US9543041B2Jan 10, 2017
Configuration and testing for magnetoresistive memory to ensure long term continuous operation
EVERSPIN TECHNOLOGIES INC4 citations73
US9401195B2Jul 26, 2016
Self-referenced sense amplifier for spin-torque MRAM
EVERSPIN TECHNOLOGIES INC3 citations73
ALAM SYED M
3 patentsUS9047969B2Jun 2, 2015
Method of writing to a spin torque magnetic random access memory
ALAM SYED M12 citations90
US9112536B2Aug 18, 2015
Method of reading and writing to a spin torque magnetic random access memory with error correcting code
ALAM SYED M12 citations82
US8811071B2Aug 19, 2014
Method of writing to a spin torque magnetic random access memory
ALAM SYED M10 citations82
IBM
2 patentsFREESCALE SEMICONDUCTOR INC
1 patentShowing the top 50 of 110 patents by PatentIndex Score.