Inventor
JEON JEONG-SIC
KR27 patents
⚠️ This page may combine multiple inventors who share the name “JEON JEONG-SIC”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
25 patentsUS7053435B2May 30, 2006
Electronic devices including electrodes with insulating spacers thereon
SAMSUNG ELECTRONICS CO LTD57 citations95
US6607954B2Aug 19, 2003
Methods of fabricating cylinder-type capacitors for semiconductor devices using a hard mask and a mold layer
SAMSUNG ELECTRONICS CO LTD20 citations91
US6350642B1Feb 26, 2002
Method of manufacturing semiconductor memory device including various contact studs
SAMSUNG ELECTRONICS CO LTD17 citations80
US6764955B2Jul 20, 2004
Semiconductor device having a contact window and fabrication method thereof
SAMSUNG ELECTRONICS CO LTD8 citations74
US6404055B1Jun 11, 2002
Semiconductor device with improved metal interconnection and method for forming the metal interconnection
SAMSUNG ELECTRONICS CO LTD8 citations74
US7314795B2Jan 1, 2008
Methods of forming electronic devices including electrodes with insulating spacers thereon
SAMSUNG ELECTRONICS CO LTD8 citations73
US7098135B2Aug 29, 2006
Semiconductor device including bit line formed using damascene technique and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD9 citations73
US7001817B2Feb 21, 2006
Method for fabricating a semiconductor device
SAMSUNG ELECTRONICS CO LTD7 citations73
US6753221B2Jun 22, 2004
Methods for fabricating semiconductor devices having capacitors
SAMSUNG ELECTRONICS CO LTD7 citations73
US6479399B2Nov 12, 2002
Method of forming interlevel dielectric layer of semiconductor device
SAMSUNG ELECTRONICS CO LTD8 citations73
US6333219B1Dec 25, 2001
Method for forming a polysilicon node in a semiconductor device
SAMSUNG ELECTRONICS CO LTD14 citations73
US7851354B2Dec 14, 2010
Semiconductor memory device having local etch stopper and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations72
US7052952B2May 30, 2006
Method for forming wire line by damascene process using hard mask formed from contacts
SAMSUNG ELECTRONICS CO LTD7 citations72
US6548388B2Apr 15, 2003
Semiconductor device including gate electrode having damascene structure and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD9 citations72
US7172971B2Feb 6, 2007
Semiconductor device having a contact window including a lower with a wider to provide a lower contact resistance
SAMSUNG ELECTRONICS CO LTD3 citations63
US6919640B2Jul 19, 2005
Semiconductor device having a contact window including a lower region with a wider width to provide a lower contact resistance
SAMSUNG ELECTRONICS CO LTD4 citations63
US7888725B2Feb 15, 2011
Electronic devices including electrode walls with insulating layers thereon
SAMSUNG ELECTRONICS CO LTD1 citations62
US7648875B2Jan 19, 2010
Methods for forming DRAM devices including protective patterns and related devices
SAMSUNG ELECTRONICS CO LTD6 citations61
US7462899B2Dec 9, 2008
Semiconductor memory device having local etch stopper and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD5 citations61
US7442272B2Oct 28, 2008
Apparatus for manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations52
US7312121B2Dec 25, 2007
Method of manufacturing a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations52
US6927127B2Aug 9, 2005
Method of manufacturing a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations52
US6833050B2Dec 21, 2004
Apparatus for manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations52
US7491601B2Feb 17, 2009
Methods of forming electronic devices including electrodes with insulating spacers thereon
SAMSUNG ELECTRONICS CO LTD0 citations51
US7888724B2Feb 15, 2011
Capacitors for semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD0 citations50