Inventor
WINNERL JOSEF
DE23 patents
⚠️ This page may combine multiple inventors who share the name “WINNERL JOSEF”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SIEMENS AG
21 patentsUS4855245AAug 8, 1989
Method of manufacturing integrated circuit containing bipolar and complementary MOS transistors on a common substrate
SIEMENS AG266 citations99
US4761384AAug 2, 1988
Forming retrograde twin wells by outdiffusion of impurity ions in epitaxial layer followed by CMOS device processing
SIEMENS AG154 citations97
US5846879ADec 8, 1998
Contact structure for vertical chip connections
SIEMENS AG54 citations95
US5798297AAug 25, 1998
Method for producing a semiconductor component with electrical connection terminals for high integration density
SIEMENS AG35 citations92
US5034338AJul 23, 1991
Circuit containing integrated bipolar and complementary MOS transistors on a common substrate
SIEMENS AG30 citations92
US5013678AMay 7, 1991
Method of making an integrated circuit comprising load resistors arranged on the field oxide zones which separate the active transistor zones
SIEMENS AG25 citations92
US4798974AJan 17, 1989
Integrated circuit comprising a latch-up protection circuit in complementary MOS-circuitry technology
SIEMENS AG37 citations92
US4717686AJan 5, 1988
Method for the simultaneous manufacture of bipolar and complementary MOS transistors on a common silicon substrate
SIEMENS AG37 citations90
US4791317ADec 13, 1988
Latch-up protection circuit for integrated circuits using complementary mos circuit technology
SIEMENS AG21 citations81
US4791316ADec 13, 1988
Latch-up protection circuit for integrated circuits using complementary MOS circuit technology
SIEMENS AG21 citations81
US4960489AOct 2, 1990
Method for self-aligned manufacture of contacts between interconnects contained in wiring levels arranged above one another in an integrated circuit
SIEMENS AG20 citations80
US5100811AMar 31, 1992
Integrated circuit containing bi-polar and complementary mos transistors on a common substrate and method for the manufacture thereof
SIEMENS AG13 citations74
US4884117ANov 28, 1989
Circuit containing integrated bipolar and complementary MOS transistors on a common substrate
SIEMENS AG13 citations74
US5126816AJun 30, 1992
Integrated circuit with anti latch-up circuit in complementary MOS circuit technology
SIEMENS AG15 citations73
US6136717AOct 24, 2000
Method for producing a via hole to a doped region
SIEMENS AG8 citations72
US5045716ASep 3, 1991
Integrated circuit in complementary circuit technology comprising a substrate bias voltage generator
SIEMENS AG7 citations72
US4873668AOct 10, 1989
Integrated circuit in complementary circuit technology comprising a substrate bias generator
SIEMENS AG11 citations72
US5148250ASep 15, 1992
Bipolar transistor as protective element for integrated circuits
SIEMENS AG15 citations71
US5883832AMar 16, 1999
Electrically erasable and programmable non-volatile storage location
SIEMENS AG5 citations63
US6034902AMar 7, 2000
Solid-state memory device
SIEMENS AG6 citations62
US4807010AFeb 21, 1989
Integrated circuit in complementary circuit technology comprising a substrate bias voltage generator and a Schottky diode
SIEMENS AG5 citations61