Inventor
OGURA ATSUSHI
JP25 patents
⚠️ This page may combine multiple inventors who share the name “OGURA ATSUSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NEC CORP
14 patentsUS6211041B1Apr 3, 2001
Silicon-on-insulator (SOI) substrate and method of fabricating the same
NEC CORP144 citations99
US5427976AJun 27, 1995
Method of producing a semiconductor on insulating substrate, and a method of forming a transistor thereon
NEC CORP86 citations96
US7701018B2Apr 20, 2010
Semiconductor device and method for manufacturing same
NEC CORP45 citations92
US7612416B2Nov 3, 2009
Semiconductor device having a conductive portion below an interlayer insulating film and method for producing the same
NEC CORP36 citations92
US7605443B2Oct 20, 2009
Semiconductor substrate manufacturing method and semiconductor device manufacturing method, and semiconductor substrate and semiconductor device manufactured by the methods
NEC CORP22 citations92
US5888297AMar 30, 1999
Method of fabricating SOI substrate
NEC CORP36 citations92
US5668046ASep 16, 1997
Method of producing a semiconductor on insulating substrate, and a method of forming transistor thereon
NEC CORP34 citations92
US6933569B2Aug 23, 2005
Soi mosfet
NEC CORP24 citations91
US5650042AJul 22, 1997
Method for thinning a semiconductor film on an insulating film
NEC CORP15 citations82
US6489654B2Dec 3, 2002
Silicon-on-insulator (SOI) substrate
NEC CORP9 citations74
US6074928AJun 13, 2000
Method of fabricating SOI substrate
NEC CORP12 citations74
US5556503ASep 17, 1996
Apparatus for thinning a semiconductor film on an insulating film
NEC CORP9 citations74
US6548379B1Apr 15, 2003
SOI substrate and method for manufacturing the same
NEC CORP2 citations63
US6316337B1Nov 13, 2001
Production process of SOI substrate
NEC CORP5 citations63