Inventor
HASHEMI MAJID M
US15 patents
⚠️ This page may combine multiple inventors who share the name “HASHEMI MAJID M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NAT SCIENT CORP
7 patentsUS6301147B1Oct 9, 2001
Electronic semiconductor circuit which includes a tunnel diode
NAT SCIENT CORP93 citations97
US6104631AAug 15, 2000
Static memory cell with load circuit using a tunnel diode
NAT SCIENT CORP103 citations97
US6013939AJan 11, 2000
Monolithic inductor with magnetic flux lines guided away from substrate
NAT SCIENT CORP48 citations95
US6423990B1Jul 23, 2002
Vertical heterojunction bipolar transistor
NAT SCIENT CORP20 citations92
US6281778B1Aug 28, 2001
Monolithic inductor with magnetic flux lines guided away from substrate
NAT SCIENT CORP21 citations92
US5912481AJun 15, 1999
Heterojunction bipolar transistor having wide bandgap, low interdiffusion base-emitter junction
NAT SCIENT CORP10 citations73
US6885853B2Apr 26, 2005
Communications receiver with integrated IF filter and method therefor
NAT SCIENT CORP9 citations67
MOTOROLA INC
7 patentsUS5550065AAug 27, 1996
Method of fabricating self-aligned FET structure having a high temperature stable T-shaped Schottky gate contact
MOTOROLA INC25 citations91
US5739557AApr 14, 1998
Refractory gate heterostructure field effect transistor
MOTOROLA INC26 citations88
US5599738AFeb 4, 1997
Methods of fabrication of submicron features in semiconductor devices
MOTOROLA INC11 citations73
US5478437ADec 26, 1995
Selective processing using a hydrocarbon and hydrogen
MOTOROLA INC7 citations73
US5856684AJan 5, 1999
High power HFET with improved channel interfaces
MOTOROLA INC3 citations63
US5640025AJun 17, 1997
High frequency semiconductor transistor
MOTOROLA INC3 citations63
US5514606AMay 7, 1996
Method of fabricating high breakdown voltage FETs
MOTOROLA INC5 citations63