Inventor

LO CHUAN-KAI

TW2 patents

Patents

2 patents

US6486070B1Nov 26, 2002

Ultra-high oxide to photoresist selective etch of high-aspect-ratio openings in a low-pressure, high-density plasma

LAM RES CORP26 citations89

US6559049B2May 6, 2003

All dual damascene oxide etch process steps in one confined plasma chamber

LAM RES CORP24 citations88