Inventor
LIN CHIN HSI
TW34 patents
⚠️ This page may combine multiple inventors who share the name “LIN CHIN HSI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MACRONIX INT CO LTD
18 patentsUS6175519B1Jan 16, 2001
Virtual ground EPROM structure
MACRONIX INT CO LTD82 citations96
US5959892ASep 28, 1999
Apparatus and method for programming virtual ground EPROM array cell without disturbing adjacent cells
MACRONIX INT CO LTD88 citations93
US6292395B1Sep 18, 2001
Source and drain sensing
MACRONIX INT CO LTD22 citations92
US6046934AApr 4, 2000
Method and device for multi-level programming of a memory cell
MACRONIX INT CO LTD28 citations92
US6178118B1Jan 23, 2001
Electrically programmable semiconductor device with multi-level wordline voltages for programming multi-level threshold voltages
MACRONIX INT CO LTD15 citations84
US6700811B1Mar 2, 2004
Random access memory device and method for driving a plate line segment therein
MACRONIX INT CO LTD13 citations82
US6396730B1May 28, 2002
Non-volatile memory cell and sensing method
MACRONIX INT CO LTD14 citations82
US6757186B2Jun 29, 2004
Method and logic decision device for generating ferro-electric capacitor reference voltage
MACRONIX INT CO LTD11 citations74
US6404678B1Jun 11, 2002
Source and drain sensing
MACRONIX INT CO LTD13 citations74
US6181604B1Jan 30, 2001
Method for fast programming of EPROMS and multi-level flash EPROMS
MACRONIX INT CO LTD14 citations74
US6028790AFeb 22, 2000
Method and device for programming a non-volatile memory cell by controlling source current pulldown rate
MACRONIX INT CO LTD8 citations74
US6804140B2Oct 12, 2004
Capacitance sensing method of reading a ferroelectric RAM
MACRONIX INT CO LTD11 citations72
US6621756B2Sep 16, 2003
Compact integrated circuit with memory array
MACRONIX INT CO LTD8 citations72
US7453714B2Nov 18, 2008
Over-driven access method and device for ferroelectric memory
MACRONIX INT CO LTD3 citations61
US7307867B2Dec 11, 2007
Over-driven access method and device for ferroelectric memory
MACRONIX INT CO LTD4 citations61
US7548445B2Jun 16, 2009
Over-driven access method and device for ferroelectric memory
MACRONIX INT CO LTD0 citations51
US7394678B2Jul 1, 2008
Over-driven access method and device for ferroelectric memory
MACRONIX INT CO LTD0 citations51
US6525361B1Feb 25, 2003
Process and integrated circuit for a multilevel memory cell with an asymmetric drain
MACRONIX INT CO LTD1 citations48
SOLID STATE SYSTEM CO LTD
12 patentsUS7161850B2Jan 9, 2007
NAND flash memory and blank page search method therefor
SOLID STATE SYSTEM CO LTD13 citations93
US7200038B2Apr 3, 2007
Nonvolatile memory structure
SOLID STATE SYSTEM CO LTD19 citations92
US7046549B2May 16, 2006
Nonvolatile memory structure
SOLID STATE SYSTEM CO LTD37 citations92
US7020018B2Mar 28, 2006
Nonvolatile memory device and method for fabricating the same
SOLID STATE SYSTEM CO LTD26 citations92
US7119394B2Oct 10, 2006
Nonvolatile memory device and method for fabricating the same
SOLID STATE SYSTEM CO LTD14 citations84
US7085160B2Aug 1, 2006
NAND flash memory and blank page search method therefor
SOLID STATE SYSTEM CO LTD11 citations84
US7227232B2Jun 5, 2007
Contactless mask programmable ROM
SOLID STATE SYSTEM CO LTD9 citations74
US7061042B2Jun 13, 2006
Double-cell memory device
SOLID STATE SYSTEM CO LTD8 citations74
US6987298B2Jan 17, 2006
Circuit layout and structure for a non-volatile memory
SOLID STATE SYSTEM CO LTD9 citations74
US7233527B2Jun 19, 2007
Nonvolatile memory structure
SOLID STATE SYSTEM CO LTD2 citations63
US7094649B2Aug 22, 2006
Method for forming multi-level mask ROM cell and NAND multi-level mask ROM
SOLID STATE SYSTEM CO LTD5 citations63
US7015553B2Mar 21, 2006
Compact mask programmable ROM
SOLID STATE SYSTEM CO LTD1 citations52