Inventor
NI FUL LONG
TW21 patents
⚠️ This page may combine multiple inventors who share the name “NI FUL LONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MACRONIX INT CO LTD
15 patentsUS6175519B1Jan 16, 2001
Virtual ground EPROM structure
MACRONIX INT CO LTD82 citations96
US5959892ASep 28, 1999
Apparatus and method for programming virtual ground EPROM array cell without disturbing adjacent cells
MACRONIX INT CO LTD88 citations93
US7330376B1Feb 12, 2008
Method for memory data storage by partition into narrower threshold voltage distribution regions
MACRONIX INT CO LTD30 citations92
US7558149B2Jul 7, 2009
Method and apparatus to control sensing time for nonvolatile memory
MACRONIX INT CO LTD9 citations84
US6178118B1Jan 23, 2001
Electrically programmable semiconductor device with multi-level wordline voltages for programming multi-level threshold voltages
MACRONIX INT CO LTD15 citations84
US6181604B1Jan 30, 2001
Method for fast programming of EPROMS and multi-level flash EPROMS
MACRONIX INT CO LTD14 citations74
US6028790AFeb 22, 2000
Method and device for programming a non-volatile memory cell by controlling source current pulldown rate
MACRONIX INT CO LTD8 citations74
US6468869B1Oct 22, 2002
Method of fabricating mask read only memory
MACRONIX INT CO LTD9 citations73
US6621756B2Sep 16, 2003
Compact integrated circuit with memory array
MACRONIX INT CO LTD8 citations72
US7443753B2Oct 28, 2008
Memory structure, programming method and reading method therefor, and memory control circuit thereof
MACRONIX INT CO LTD2 citations63
US6870752B2Mar 22, 2005
High density mask ROM having flat-type bank select
MACRONIX INT CO LTD2 citations61
US6621129B1Sep 16, 2003
MROM memory cell structure for storing multi level bit information
MACRONIX INT CO LTD2 citations56
US7929365B2Apr 19, 2011
Memory structure, programming method and reading method therefor, and memory control circuit thereof
MACRONIX INT CO LTD1 citations52
US6525361B1Feb 25, 2003
Process and integrated circuit for a multilevel memory cell with an asymmetric drain
MACRONIX INT CO LTD1 citations48
US6535432B2Mar 18, 2003
Method of erasing a non-volatile memory
MACRONIX INT CO LTD1 citations47
MEGA CHIPS CORP
6 patentsUS5895887AApr 20, 1999
Semiconductor device
MEGA CHIPS CORP13 citations82
US5825083AOct 20, 1998
Semiconductor device
MEGA CHIPS CORP13 citations82
US5866940AFeb 2, 1999
Semiconductor device
MEGA CHIPS CORP8 citations74
US5847449ADec 8, 1998
Semiconductor device
MEGA CHIPS CORP4 citations74
US5700975ADec 23, 1997
Semiconductor device
MEGA CHIPS CORP10 citations74
US5563844AOct 8, 1996
Architecture for accessing very high density memory device
MEGA CHIPS CORP7 citations74