Inventor
ISHIWATA NOBUYUKI
JP92 patents
⚠️ This page may combine multiple inventors who share the name “ISHIWATA NOBUYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NEC CORP
33 patentsUS6452204B1Sep 17, 2002
Tunneling magnetoresistance transducer and method for manufacturing the same
NEC CORP91 citations98
US6341053B1Jan 22, 2002
Magnetic tunnel junction elements and their fabrication method
NEC CORP81 citations98
US6542342B1Apr 1, 2003
Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer
NEC CORP69 citations96
US6466416B1Oct 15, 2002
Magnetic head, method for making the same and magnetic recording/reproducing device using the same
NEC CORP67 citations96
US6999287B2Feb 14, 2006
Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system
NEC CORP21 citations93
US6934132B2Aug 23, 2005
Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system
NEC CORP12 citations93
US6747853B2Jun 8, 2004
Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system
NEC CORP13 citations93
US5892641AApr 6, 1999
Magnetoresistive effect head with individual layers satisfying a basic inequality involving layer thickness and ion milling rates
NEC CORP22 citations93
US5876843AMar 2, 1999
Magnetoresistive element
NEC CORP20 citations93
US5641557AJun 24, 1997
Magnetoresistive element
NEC CORP21 citations93
US8379429B2Feb 19, 2013
Domain wall motion element and magnetic random access memory
NEC CORP20 citations92
US8040724B2Oct 18, 2011
Magnetic domain wall random access memory
NEC CORP22 citations92
US7929342B2Apr 19, 2011
Magnetic memory cell, magnetic random access memory, and data read/write method for magnetic random access memory
NEC CORP29 citations92
US6950290B2Sep 27, 2005
Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer
NEC CORP21 citations92
US6624987B1Sep 23, 2003
Magnetic head with a tunnel junction including metallic material sandwiched between one of an oxide and a nitride of the metallic material
NEC CORP41 citations92
US6490139B1Dec 3, 2002
Magneto-resistive element and magnetic head for data writing/reading
NEC CORP33 citations92
US6125009ASep 26, 2000
Magnetoresistive effect composite head having a pole containing Co-M
NEC CORP16 citations92
US6055137AApr 25, 2000
Magnetoresistive effect composite head with configured pole tip
NEC CORP20 citations92
US5938941AAug 17, 1999
Magnetoresistance effect composite head and method of forming the same
NEC CORP19 citations92
US6154345ANov 28, 2000
Magnetoresistive effect composite head
NEC CORP20 citations91
US5736264AApr 7, 1998
Magnetic core and magnetic head using the same
NEC CORP20 citations91
US8351249B2Jan 8, 2013
Magnetic random access memory
NEC CORP6 citations84
US6903908B2Jun 7, 2005
Magnetoresistive effect sensor with barrier layer smoothed by composition of lower shield layer
NEC CORP16 citations84
US6174736B1Jan 16, 2001
Method of fabricating ferromagnetic tunnel junction device
NEC CORP17 citations84
US6798626B2Sep 28, 2004
Magnetoresistive effect element having a ferromagnetic tunnel junction film with an oxide or nitride of a metallic material
NEC CORP13 citations83
US6718621B1Apr 13, 2004
Magnetoresistive head production method
NEC CORP15 citations83
US6791794B2Sep 14, 2004
Magnetic head having an antistripping layer for preventing a magnetic layer from stripping
NEC CORP14 citations82
US7369375B2May 6, 2008
Magneto-resistance effect element and magneto-resistance effect head
NEC CORP6 citations74
US7161774B2Jan 9, 2007
Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system
NEC CORP7 citations74
US6026559AFeb 22, 2000
Method for fabricating a complex magnetic head including a reproducing magneto-resistance head
NEC CORP12 citations74
US5910870AJun 8, 1999
Magnetoresistive effect composite head with laminated magnetic layer isolated from magnetic pole layer
NEC CORP13 citations74
US5572391ANov 5, 1996
Magnetic head
NEC CORP12 citations74
US8363461B2Jan 29, 2013
Magnetic random access memory, method of initializing magnetic random access memory and method of writing magnetic random access memory
NEC CORP5 citations73
FUKAMI SHUNSUKE
8 patentsUS8559214B2Oct 15, 2013
Magnetic memory device and magnetic random access memory
FUKAMI SHUNSUKE12 citations84
US8416611B2Apr 9, 2013
Magnetoresistance effect element and magnetic random access memory
FUKAMI SHUNSUKE12 citations84
US8194436B2Jun 5, 2012
Magnetic random access memory, write method therefor, and magnetoresistance effect element
FUKAMI SHUNSUKE8 citations84
US8174086B2May 8, 2012
Magnetoresistive element, and magnetic random access memory
FUKAMI SHUNSUKE8 citations84
US8159872B2Apr 17, 2012
Magnetic random access memory
FUKAMI SHUNSUKE8 citations84
US8154913B2Apr 10, 2012
Magnetoresistance effect element and magnetic random access memory
FUKAMI SHUNSUKE11 citations84
US8120950B2Feb 21, 2012
Semiconductor device
FUKAMI SHUNSUKE10 citations84
US8791534B2Jul 29, 2014
Magnetic memory device and magnetic memory
FUKAMI SHUNSUKE4 citations73
TDK CORP
3 patentsUS6597543B1Jul 22, 2003
Thin-film magnetic head and magnetic storage apparatus using the same
TDK CORP21 citations91
US7085109B1Aug 1, 2006
Spin valve type transducer capable of reducing reproducing gap
TDK CORP5 citations74
US6754051B2Jun 22, 2004
Spin valve transducer having partly patterned magnetoresistance element
TDK CORP6 citations74
NAGAHARA KIYOKAZU
2 patentsSUZUKI TETSUHIRO
2 patentsDENSO CORP
1 patentSUGIBAYASHI TADAHIKO
1 patentShowing the top 50 of 92 patents by PatentIndex Score.