Inventor
NAKADA MASAFUMI
JP50 patents
⚠️ This page may combine multiple inventors who share the name “NAKADA MASAFUMI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NEC CORP
39 patentsUS6341053B1Jan 22, 2002
Magnetic tunnel junction elements and their fabrication method
NEC CORP81 citations98
US6542342B1Apr 1, 2003
Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer
NEC CORP69 citations96
US6301088B1Oct 9, 2001
Magnetoresistance effect device and method of forming the same as well as magnetoresistance effect sensor and magnetic recording system
NEC CORP73 citations96
US5766743AJun 16, 1998
Magnetoresistance effect film, a method of manufacturing the same, and magnetoresistance effect device
NEC CORP57 citations96
US6333842B1Dec 25, 2001
Magneto-resistance effect type composite head and production method thereof
NEC CORP49 citations94
US6999287B2Feb 14, 2006
Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system
NEC CORP21 citations93
US6934132B2Aug 23, 2005
Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system
NEC CORP12 citations93
US6747853B2Jun 8, 2004
Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system
NEC CORP13 citations93
US6083632AJul 4, 2000
Magnetoresistive effect film and method of manufacture thereof
NEC CORP35 citations93
US5932343AAug 3, 1999
Magnetic resistance effect element and method for manufacture thereof
NEC CORP39 citations93
US6950290B2Sep 27, 2005
Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer
NEC CORP21 citations92
US6624987B1Sep 23, 2003
Magnetic head with a tunnel junction including metallic material sandwiched between one of an oxide and a nitride of the metallic material
NEC CORP41 citations92
US6538861B1Mar 25, 2003
Magnetoresistive head having ferromagnetic tunnel junction film with a smaller resistance at a terminal portion than a central portion, magnetic resistance detection system with the magnetoresistive head and a magnetic storage system using it
NEC CORP44 citations92
US6490139B1Dec 3, 2002
Magneto-resistive element and magnetic head for data writing/reading
NEC CORP33 citations92
US6051309AApr 18, 2000
Magnetoresistance effect film and method for making the same
NEC CORP21 citations92
US5989690ANov 23, 1999
Magnetoresistance effect film, a method of manufacturing the same, and magnetoresistance effect device
NEC CORP19 citations92
US5889640AMar 30, 1999
Magnetoresistive element and sensor having optimal cross point
NEC CORP24 citations92
US7162109B2Jan 9, 2007
Optical modulator and method of manufacturing same
NEC CORP12 citations84
US6903908B2Jun 7, 2005
Magnetoresistive effect sensor with barrier layer smoothed by composition of lower shield layer
NEC CORP16 citations84
US6452762B1Sep 17, 2002
Magneto-resistive element and production method thereof, magneto-resistive head, and magnetic recording/reproducing apparatus
NEC CORP15 citations84
US6215631B1Apr 10, 2001
Magnetoresistive effect film and manufacturing method therefor
NEC CORP18 citations84
US6174736B1Jan 16, 2001
Method of fabricating ferromagnetic tunnel junction device
NEC CORP17 citations84
US6147843ANov 14, 2000
Magnetoresistive effect element having magnetoresistive layer and underlying metal layer
NEC CORP17 citations84
US6798626B2Sep 28, 2004
Magnetoresistive effect element having a ferromagnetic tunnel junction film with an oxide or nitride of a metallic material
NEC CORP13 citations83
US6718621B1Apr 13, 2004
Magnetoresistive head production method
NEC CORP15 citations83
US7369375B2May 6, 2008
Magneto-resistance effect element and magneto-resistance effect head
NEC CORP6 citations74
US7272270B2Sep 18, 2007
Optical modulator and method of manufacturing same
NEC CORP7 citations74
US7161774B2Jan 9, 2007
Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system
NEC CORP7 citations74
US6022633AFeb 8, 2000
Magnetoresistive effect element and magnetoresistive effect sensor
NEC CORP8 citations74
US8358891B2Jan 22, 2013
Waveguide type optical device
NEC CORP6 citations73
US7372673B2May 13, 2008
Magnetoresistive effect transducer having longitudinal bias layer and control layer directly connected to free layer
NEC CORP7 citations73
US6493195B1Dec 10, 2002
Magnetoresistance element, with lower electrode anti-erosion/flaking layer
NEC CORP13 citations73
US6639766B2Oct 28, 2003
Magneto-resistance effect type composite head and production method thereof
NEC CORP8 citations71
US7920769B2Apr 5, 2011
Optical element, integrated optic device and optical information transmission system
NEC CORP2 citations63
US7298596B2Nov 20, 2007
Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system
NEC CORP2 citations63
US7265949B2Sep 4, 2007
Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system
NEC CORP2 citations63
US7277261B2Oct 2, 2007
Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system
NEC CORP2 citations61
US7158355B2Jan 2, 2007
Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system
NEC CORP0 citations52
US5917799AJun 29, 1999
Method of reading data of magneto-optical recording medium which includes a guide groove portion having land and groove areas
NEC CORP1 citations52
NAKADA MASAFUMI
4 patentsUS8515225B2Aug 20, 2013
Optical device, method for manufacturing the same and optical integrated device using the same
NAKADA MASAFUMI2 citations61
US8254745B2Aug 28, 2012
Optical device, optical integrated device, and method of manufacturing the same
NAKADA MASAFUMI3 citations61
US8519323B2Aug 27, 2013
Electric field/magnetic field sensors and methods of fabricating the same
NAKADA MASAFUMI1 citations49
US8153955B2Apr 10, 2012
Electric field sensor and method for fabricating the same
NAKADA MASAFUMI1 citations49
TDK CORP
3 patentsUS6775110B1Aug 10, 2004
Magnetoresistance effect device with a Ta, Hf, or Zr sublayer contacting an NiFe layer in a magneto resistive structure
TDK CORP5 citations63
US6570744B1May 27, 2003
Magnetoresistance effect film and device
TDK CORP4 citations63
US6781800B2Aug 24, 2004
Magnetoresistance effect film and device
TDK CORP0 citations52