Inventor
HWANG JAE-SEUNG
KR24 patents
⚠️ This page may combine multiple inventors who share the name “HWANG JAE-SEUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
20 patentsUS6483146B2Nov 19, 2002
Nonvolatile semiconductor memory device and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD80 citations98
US6743695B2Jun 1, 2004
Shallow trench isolation method and method for manufacturing non-volatile memory device using the same
SAMSUNG ELECTRONICS CO LTD23 citations92
US6642107B2Nov 4, 2003
Non-volatile memory device having self-aligned gate structure and method of manufacturing same
SAMSUNG ELECTRONICS CO LTD30 citations92
US6617232B2Sep 9, 2003
Method of forming wiring using a dual damascene process
SAMSUNG ELECTRONICS CO LTD23 citations92
US6583008B2Jun 24, 2003
Nonvolatile semiconductor memory device and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD24 citations92
US7667221B2Feb 23, 2010
Phase change memory devices and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD11 citations84
US7745290B2Jun 29, 2010
Methods of fabricating semiconductor device including fin-fet
SAMSUNG ELECTRONICS CO LTD15 citations83
US7723191B2May 25, 2010
Method of manufacturing semiconductor device having buried gate
SAMSUNG ELECTRONICS CO LTD14 citations83
US7749902B2Jul 6, 2010
Methods of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD8 citations81
US7452773B2Nov 18, 2008
Method of manufacturing a flash memory device
SAMSUNG ELECTRONICS CO LTD5 citations62
US7534704B2May 19, 2009
Thin layer structure and method of forming the same
SAMSUNG ELECTRONICS CO LTD5 citations61
US6897153B2May 24, 2005
Etching gas composition for silicon oxide and method of etching silicon oxide using the same
SAMSUNG ELECTRONICS CO LTD6 citations61
US6825121B2Nov 30, 2004
Method of manufacturing a capacitor of a semiconductor device
SAMSUNG ELECTRONICS CO LTD5 citations61
US6815335B2Nov 9, 2004
Method for forming a contact in a semiconductor process
SAMSUNG ELECTRONICS CO LTD2 citations61
US7452807B2Nov 18, 2008
Method of forming a metal wiring in a semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations52
US8361849B2Jan 29, 2013
Method of fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US7989279B2Aug 2, 2011
Method of fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US7659162B2Feb 9, 2010
Phase change memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations51
US7531450B2May 12, 2009
Method of fabricating semiconductor device having contact hole with high aspect-ratio
SAMSUNG ELECTRONICS CO LTD0 citations51
US7001692B2Feb 21, 2006
Method of forming a mask having nitride film
SAMSUNG ELECTRONICS CO LTD1 citations50