P

Inventor

HWANG JAE-SEUNG

KR24 patents
⚠️ This page may combine multiple inventors who share the name “HWANG JAE-SEUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

20 patents
US6483146B2Nov 19, 2002

Nonvolatile semiconductor memory device and manufacturing method thereof

SAMSUNG ELECTRONICS CO LTD80 citations98
US6743695B2Jun 1, 2004

Shallow trench isolation method and method for manufacturing non-volatile memory device using the same

SAMSUNG ELECTRONICS CO LTD23 citations92
US6642107B2Nov 4, 2003

Non-volatile memory device having self-aligned gate structure and method of manufacturing same

SAMSUNG ELECTRONICS CO LTD30 citations92
US6617232B2Sep 9, 2003

Method of forming wiring using a dual damascene process

SAMSUNG ELECTRONICS CO LTD23 citations92
US6583008B2Jun 24, 2003

Nonvolatile semiconductor memory device and manufacturing method thereof

SAMSUNG ELECTRONICS CO LTD24 citations92
US7667221B2Feb 23, 2010

Phase change memory devices and methods for fabricating the same

SAMSUNG ELECTRONICS CO LTD11 citations84
US7745290B2Jun 29, 2010

Methods of fabricating semiconductor device including fin-fet

SAMSUNG ELECTRONICS CO LTD15 citations83
US7723191B2May 25, 2010

Method of manufacturing semiconductor device having buried gate

SAMSUNG ELECTRONICS CO LTD14 citations83
US7749902B2Jul 6, 2010

Methods of manufacturing semiconductor device

SAMSUNG ELECTRONICS CO LTD8 citations81
US7452773B2Nov 18, 2008

Method of manufacturing a flash memory device

SAMSUNG ELECTRONICS CO LTD5 citations62
US7534704B2May 19, 2009

Thin layer structure and method of forming the same

SAMSUNG ELECTRONICS CO LTD5 citations61
US6897153B2May 24, 2005

Etching gas composition for silicon oxide and method of etching silicon oxide using the same

SAMSUNG ELECTRONICS CO LTD6 citations61
US6825121B2Nov 30, 2004

Method of manufacturing a capacitor of a semiconductor device

SAMSUNG ELECTRONICS CO LTD5 citations61
US6815335B2Nov 9, 2004

Method for forming a contact in a semiconductor process

SAMSUNG ELECTRONICS CO LTD2 citations61
US7452807B2Nov 18, 2008

Method of forming a metal wiring in a semiconductor device

SAMSUNG ELECTRONICS CO LTD1 citations52
US8361849B2Jan 29, 2013

Method of fabricating semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations51
US7989279B2Aug 2, 2011

Method of fabricating semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations51
US7659162B2Feb 9, 2010

Phase change memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD1 citations51
US7531450B2May 12, 2009

Method of fabricating semiconductor device having contact hole with high aspect-ratio

SAMSUNG ELECTRONICS CO LTD0 citations51
US7001692B2Feb 21, 2006

Method of forming a mask having nitride film

SAMSUNG ELECTRONICS CO LTD1 citations50

RYU YONG-HWAN

1 patent

LEE YONG-WOO

1 patent

KWON YONG-HYUN

1 patent

HWANG JAE SEUNG

1 patent