Inventor
TSUGE HISANAO
JP22 patents
⚠️ This page may combine multiple inventors who share the name “TSUGE HISANAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NEC CORP
18 patentsUS6452204B1Sep 17, 2002
Tunneling magnetoresistance transducer and method for manufacturing the same
NEC CORP91 citations98
US6341053B1Jan 22, 2002
Magnetic tunnel junction elements and their fabrication method
NEC CORP81 citations98
US6542342B1Apr 1, 2003
Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer
NEC CORP69 citations96
US6333842B1Dec 25, 2001
Magneto-resistance effect type composite head and production method thereof
NEC CORP49 citations94
US6950290B2Sep 27, 2005
Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer
NEC CORP21 citations92
US6538861B1Mar 25, 2003
Magnetoresistive head having ferromagnetic tunnel junction film with a smaller resistance at a terminal portion than a central portion, magnetic resistance detection system with the magnetoresistive head and a magnetic storage system using it
NEC CORP44 citations92
US6490139B1Dec 3, 2002
Magneto-resistive element and magnetic head for data writing/reading
NEC CORP33 citations92
US6392281B1May 21, 2002
Ferromagnetic tunnel junction device and method of forming the same
NEC CORP21 citations92
US6329078B1Dec 11, 2001
Magnetoresistive element and method of forming the same
NEC CORP21 citations92
US6174736B1Jan 16, 2001
Method of fabricating ferromagnetic tunnel junction device
NEC CORP17 citations84
US6215696B1Apr 10, 2001
Ferromagnetic tunnel junction device and method of forming the same
NEC CORP13 citations74
US4548834AOct 22, 1985
Method of producing a Josephson tunnel barrier
NEC CORP18 citations74
US7372673B2May 13, 2008
Magnetoresistive effect transducer having longitudinal bias layer and control layer directly connected to free layer
NEC CORP7 citations73
US6493195B1Dec 10, 2002
Magnetoresistance element, with lower electrode anti-erosion/flaking layer
NEC CORP13 citations73
US6639766B2Oct 28, 2003
Magneto-resistance effect type composite head and production method thereof
NEC CORP8 citations71
US5681500AOct 28, 1997
Magnetic oxide having a large magnetoresistance effect at room temperature
NEC CORP2 citations61
US6914257B2Jul 5, 2005
Magnetoresistive device and method of producing the same
NEC CORP6 citations60
US4983545AJan 8, 1991
Planarization of dielectric films on integrated circuits
NEC CORP6 citations59