Inventor

KAMIJO ATSUSHI

JP32 patents

⚠️ This page may combine multiple inventors who share the name “KAMIJO ATSUSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KAMIJO ATSUSHI

NEC CORP

Magnetoresistance effect device exchange coupling film including a disordered antiferromagnetic layer, an FCC exchange coupling giving layer, and a BCC exchange coupling enhancement layer

Magnetic tunnel junction elements and their fabrication method

Magnetic tunnel magneto-resistance device and magnetic memory using the same

Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer

Magneto-resistance effect type composite head and production method thereof

Magnetoresistance device with a diffusion barrier between a conductor and a magnetoresistance element and method of fabricating the same

Magnetoresistance device with a diffusion barrier between a conductor and a magnetoresistance element and method of fabricating the same

Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer

Magnetoresistive head having ferromagnetic tunnel junction film with a smaller resistance at a terminal portion than a central portion, magnetic resistance detection system with the magnetoresistive head and a magnetic storage system using it

Magneto-resistive element and magnetic head for data writing/reading

Magnetic multilayer structure having magnetoresistance ratio and large magnetic sensitivity based on the giant magnetoresistance effect and process of fabrication thereof

Spin valve magnetoresistive device

Magnetoresistive thin-film and device

Method of fabricating ferromagnetic tunnel junction device

Soft magnetic film of iron and process of formation thereof

Magnetoresistive device and method for manufacturing same

Laminated ferrimagnetic thin film, and magneto-resistive effect element and ferromagnetic tunnel element using this thin film

Magnetoresistive effect transducer having longitudinal bias layer and control layer directly connected to free layer

Magnetoresistance element, with lower electrode anti-erosion/flaking layer

Magneto-resistance effect type composite head and production method thereof

Laminated ferrimagnetic thin film, and magneto-resistive effect element and ferromagnetic tunnel element using this thin film

Magnetic random access memory

Wire bonder with controlled atmosphere

Magnetoresistive device and method of producing the same

SAMSUNG MOBILE DISPLAY CO LTD

Electroluminescent display device

Method of manufacturing a substrate for organic electroluminescent device

Substrate of emitting device and emitting device using the same

SAMSUNG SDI CO LTD

Substrate for optical element, organic electroluminescence element and organic electroluminescence display device

Light-emitting device substrate with light control layer and light-emitting device using the same

Optical control portion with graded metal dopant to control refractive index

NIHON DEMPA KOGYO CO

Surface acoustic wave device and method of manufacturing the same

NDK SAW DEVICES CO LTD

Surface acoustic wave device and method for manufacturing the same