Inventor
LIEN HAO-MING
TW31 patents
⚠️ This page may combine multiple inventors who share the name “LIEN HAO-MING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
8 patentsUS10269937B2Apr 23, 2019
Semiconductor strips with undercuts and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10170367B2Jan 1, 2019
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9443961B2Sep 13, 2016
Semiconductor strips with undercuts and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US10103141B2Oct 16, 2018
Fin deformation modulation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9865708B2Jan 9, 2018
Semiconductor strips with undercuts and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9564488B2Feb 7, 2017
Strained isolation regions
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10316411B2Jun 11, 2019
Injector for forming films respectively on a stack of wafers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9779980B2Oct 3, 2017
Uniform shallow trench isolation regions and the method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
TAIWAN SEMICONDUCTOR MFG
7 patentsUS8895446B2Nov 25, 2014
Fin deformation modulation
TAIWAN SEMICONDUCTOR MFG31 citations92
US9276062B2Mar 1, 2016
Fin deformation modulation
TAIWAN SEMICONDUCTOR MFG6 citations84
US9177955B2Nov 3, 2015
Isolation region gap fill method
TAIWAN SEMICONDUCTOR MFG6 citations72
US8629508B2Jan 14, 2014
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG1 citations63
US9017763B2Apr 28, 2015
Injector for forming films respectively on a stack of wafers
TAIWAN SEMICONDUCTOR MFG3 citations62
US7276417B2Oct 2, 2007
Hybrid STI stressor with selective re-oxidation anneal
TAIWAN SEMICONDUCTOR MFG4 citations59
US8828841B2Sep 9, 2014
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG0 citations52
MACRONIX INT CO LTD
6 patentsUS7948799B2May 24, 2011
Structure and method of sub-gate NAND memory with bandgap engineered SONOS devices
MACRONIX INT CO LTD28 citations92
US7414889B2Aug 19, 2008
Structure and method of sub-gate and architectures employing bandgap engineered SONOS devices
MACRONIX INT CO LTD15 citations84
US7218554B2May 15, 2007
Method of refreshing charge-trapping non-volatile memory using band-to-band tunneling hot hole (BTBTHH) injection
MACRONIX INT CO LTD6 citations60
US7539065B2May 26, 2009
Method of programming non-volatile memory
MACRONIX INT CO LTD0 citations48
US7307882B2Dec 11, 2007
Non-volatile memory
MACRONIX INT CO LTD1 citations48
US7852673B2Dec 14, 2010
Method for operating nonvolatitle memory array
MACRONIX INT CO LTD0 citations42