Inventor
SONG JUN
CN76 patents
⚠️ This page may combine multiple inventors who share the name “SONG JUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CHARTERED SEMICONDUCTOR MFG
18 patentsUS6611024B2Aug 26, 2003
Method of forming PID protection diode for SOI wafer
CHARTERED SEMICONDUCTOR MFG44 citations96
US6787422B2Sep 7, 2004
Method of body contact for SOI mosfet
CHARTERED SEMICONDUCTOR MFG20 citations93
US6376379B1Apr 23, 2002
Method of hard mask patterning
CHARTERED SEMICONDUCTOR MFG25 citations93
US6303414B1Oct 16, 2001
Method of forming PID protection diode for SOI wafer
CHARTERED SEMICONDUCTOR MFG42 citations93
US6275089B1Aug 14, 2001
Low voltage controllable transient trigger network for ESD protection
CHARTERED SEMICONDUCTOR MFG45 citations93
US6177324B1Jan 23, 2001
ESD protection device for STI deep submicron technology
CHARTERED SEMICONDUCTOR MFG42 citations93
US6319783B1Nov 20, 2001
Process to fabricate a novel source-drain extension
CHARTERED SEMICONDUCTOR MFG16 citations92
US6458632B1Oct 1, 2002
UMOS-like gate-controlled thyristor structure for ESD protection
CHARTERED SEMICONDUCTOR MFG23 citations91
US6963113B2Nov 8, 2005
Method of body contact for SOI MOSFET
CHARTERED SEMICONDUCTOR MFG13 citations84
US6582856B1Jun 24, 2003
Simplified method of fabricating a rim phase shift mask
CHARTERED SEMICONDUCTOR MFG13 citations84
US6555878B2Apr 29, 2003
Umos-like gate-controlled thyristor structure for ESD protection
CHARTERED SEMICONDUCTOR MFG15 citations83
US6376319B2Apr 23, 2002
Process to fabricate a source-drain extension
CHARTERED SEMICONDUCTOR MFG13 citations74
US6835985B2Dec 28, 2004
ESD protection structure
CHARTERED SEMICONDUCTOR MFG7 citations73
US6764914B2Jul 20, 2004
Method of forming a high K metallic dielectric layer
CHARTERED SEMICONDUCTOR MFG6 citations72
US6492242B1Dec 10, 2002
Method of forming of high K metallic dielectric layer
CHARTERED SEMICONDUCTOR MFG8 citations72
US6329253B1Dec 11, 2001
Thick oxide MOS device used in ESD protection circuit
CHARTERED SEMICONDUCTOR MFG9 citations71
US6455384B2Sep 24, 2002
Method for forming MOSFET device having source/drain extension regions located underlying L shaped spacers
CHARTERED SEMICONDUCTOR MFG4 citations63
US6399431B1Jun 4, 2002
ESD protection device for SOI technology
CHARTERED SEMICONDUCTOR MFG3 citations63
HUAWEI TECH CO LTD
4 patentsUS10826395B2Nov 3, 2020
Voltage converter, method for controlling voltage converter, and voltage conversion system
HUAWEI TECH CO LTD7 citations84
US11404895B2Aug 2, 2022
Power conversion circuit, and charging apparatus and system
HUAWEI TECH CO LTD3 citations73
US11811254B2Nov 7, 2023
Power conversion circuit, and charging apparatus and system
HUAWEI TECH CO LTD0 citations63
US11342774B2May 24, 2022
Power conversion circuit, and charging apparatus and system
HUAWEI TECH CO LTD1 citations63
BRENT INT PLC
3 patentsUS6132808AOct 17, 2000
Method of treating metals using amino silanes and multi-silyl-functional silanes in admixture
BRENT INT PLC53 citations94
US6071566AJun 6, 2000
Method of treating metals using vinyl silanes and multi-silyl-functional silanes in admixture
BRENT INT PLC41 citations92
US6106901AAug 22, 2000
Method of treating metals using ureido silanes and multi-silyl-functional silanes in admixture
BRENT INT PLC29 citations90
ALIBABA GROUP HOLDING LTD
3 patentsCHEMETALL PLC
2 patentsUNIV MICHIGAN STATE
2 patentsKONINKLIJKE PHILIPS NV
2 patentsRUI TONG
2 patentsSONG JUN
2 patentsMAXPHOTONICS CORP
2 patentsCYMER INC
1 patentLSI CORP
1 patentCHARTERED SEMINCONDUCTOR MFG L
1 patentZTE CORP
1 patentMASSACHUSETTS GEN HOSPITAL
1 patentFroncare
1 patentCHENG CHAOWEN
1 patentYOU JIANJIE
1 patentACUTUS MEDICAL INC
1 patentUNIV MICHIGAN REGENTS
1 patentShowing the top 50 of 76 patents by PatentIndex Score.