Inventor

CHAVAN ASHONITA A

US40 patents

⚠️ This page may combine multiple inventors who share the name “CHAVAN ASHONITA A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHAVAN ASHONITA A

MICRON TECHNOLOGY INC

Memory cells

Methods of forming an array comprising pairs of vertically opposed capacitors and arrays comprising pairs of vertically opposed capacitors

Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic component comprising conductive material and ferroelectric material

Methods of operating ferroelectric memory cells, and related ferroelectric memory cells

Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic component comprising conductive material and ferroelectric material

Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb

Methods of forming an array comprising pairs of vertically opposed capacitors and arrays comprising pairs of vertically opposed capacitors

Polar, chiral, and non-centro-symmetric ferroelectric materials, memory cells including such materials, and related devices and methods

Memory cells

Memory cells

Methods of forming ferroelectric capacitors

Memory cells and methods of forming a capacitor including current leakage paths having different total resistances

Memory cells and semiconductor devices including ferroelectric materials

Methods of operating ferroelectric memory cells, and related ferroelectric memory cells and capacitors

Methods of operating ferroelectric memory cells, and related ferroelectric memory cells and capacitors

Methods of forming an array comprising pairs of vertically opposed capacitors and arrays comprising pairs of vertically opposed capacitors

Methods of incorporating leaker-devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker-devices

Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic component comprising conductive material and ferroelectric material

Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitry

Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic device comprising conductive material and ferroelectric material

Array of capacitors, array of memory cells, methods of forming an array of capacitors, and methods of forming an array of memory cells

Ferroelectric capacitors

Electronic devices comprising crystalline materials and related memory devices and systems

Methods of forming structures containing leaker-devices and memory configurations incorporating leaker-devices

Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker devices

Electronic device comprising conductive material and ferroelectric material

Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker devices

Methods of incorporating leaker-devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker-devices

Array of capacitors, array of memory cells, methods of forming an array of capacitors, and methods of forming an array of memory cells

Method used in forming an electronic device comprising conductive material and ferroelectric material

Methods of incorporating leaker-devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker-devices

Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitry

Memory cells and methods of forming a capacitor including current leakage paths having different total resistances

Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitry

Memory device assembly with a leaker device

Ferroelectric memory and methods of forming the same

Methods of forming crystallized materials from amorphous materials

Devices and apparatuses including asymmetric ferroelectric materials, and related methods

Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker devices

MICRON TECHONOLOGY INC

Ferroelectric memory and methods of forming the same