Inventor

COOK BETH R

US27 patents

⚠️ This page may combine multiple inventors who share the name “COOK BETH R”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

COOK BETH R

MICRON TECHNOLOGY INC

Memory cells comprising ferroelectric material and including current leakage paths having different total resistances

Methods of forming a ferroelectric memory cell

Memory cells comprising ferroelectric material and including current leakage paths having different total resistances

Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb

Semiconductor devices including ferroelectric materials

Semiconductor device structures including ferroelectric memory cells

Memory cells and methods of forming a capacitor including current leakage paths having different total resistances

Methods of incorporating leaker-devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker-devices

Resistive memory devices

Memory device assembly with non-impinged leaker devices

Methods of forming a ferroelectric memory cell

Memory cells

Semiconductor devices including ferroelectric materials

Methods of forming structures containing leaker-devices and memory configurations incorporating leaker-devices

Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker devices

Memory cells comprising ferroelectric material and including current leakage paths having different total resistances

Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker devices

Methods of incorporating leaker-devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker-devices

Semiconductor devices including ferroelectric materials

Methods of incorporating leaker-devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker-devices

Methods of forming a memory cell having programmable material that comprises a multivalent metal oxide portion and an oxygen containing dielectric portion

Memory cells and methods of forming a capacitor including current leakage paths having different total resistances

Methods of forming a capacitor comprising ferroelectric material and including current leakage paths having different total resistances

Filamentary memory devices and methods

Methods of forming a programmable region that comprises a multivalent metal oxide portion and an oxygen containing dielectric portion

RAMASWAMY DURAI VISHAK NIRMAL

Resistive memory devices

BI LEI

Filamentary memory devices and methods