Inventor

RAMASWAMY DURAI VISHAK NIRMAL

US231 patents

Patents

50 patents

US9837420B1Dec 5, 2017

Arrays of memory cells individually comprising a capacitor and an elevationally-extending transistor, methods of forming a tier of an array of memory cells, and methods of forming an array of memory cells individually comprising a capacitor and an elevationally-extending transistor

MICRON TECHNOLOGY INC46 citations98

US9613676B1Apr 4, 2017

Memory arrays comprising vertically-alternating tiers of insulative material and memory cells and methods of forming a memory array comprising memory cells individually comprising a transistor and a capacitor

MICRON TECHNOLOGY INC20 citations94

US10636471B2Apr 28, 2020

Memory arrays, ferroelectric transistors, and methods of reading and writing relative to memory cells of memory arrays

MICRON TECHNOLOGY INC15 citations94

US10396145B2Aug 27, 2019

Memory cells comprising ferroelectric material and including current leakage paths having different total resistances

MICRON TECHNOLOGY INC19 citations94

US10388658B1Aug 20, 2019

Transistors, arrays of transistors, arrays of memory cells individually comprising a capacitor and an elevationally-extending transistor, and methods of forming an array of transistors

MICRON TECHNOLOGY INC21 citations94

US10229874B1Mar 12, 2019

Arrays of memory cells individually comprising a capacitor and a transistor and methods of forming such arrays

MICRON TECHNOLOGY INC23 citations94

US10163917B2Dec 25, 2018

Cell disturb prevention using a leaker device to reduce excess charge from an electronic device

MICRON TECHNOLOGY INC23 citations94

US10062745B2Aug 28, 2018

Methods of forming an array of capacitors, methods of forming an array of memory cells individually comprising a capacitor and a transistor, arrays of capacitors, and arrays of memory cells individually comprising a capacitor and a transistor

MICRON TECHNOLOGY INC18 citations94

US10020360B1Jul 10, 2018

Integrated memory

MICRON TECHNOLOGY INC22 citations94

US9935114B1Apr 3, 2018

Methods of forming an array comprising pairs of vertically opposed capacitors and arrays comprising pairs of vertically opposed capacitors

MICRON TECHNOLOGY INC17 citations94

US9876018B2Jan 23, 2018

Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic component comprising conductive material and ferroelectric material

MICRON TECHNOLOGY INC27 citations94

US9842839B1Dec 12, 2017

Memory cell, an array of memory cells individually comprising a capacitor and a transistor with the array comprising rows of access lines and columns of digit lines, a 2T-1C memory cell, and methods of forming an array of capacitors and access transistors there-above

MICRON TECHNOLOGY INC36 citations94

US9786349B1Oct 10, 2017

Cell performance recovery using cycling techniques

MICRON TECHNOLOGY INC28 citations94

US9761715B2Sep 12, 2017

Ferroelectric field effect transistors, pluralities of ferroelectric field effect transistors arrayed in row lines and column lines, and methods of forming a plurality of ferroelectric field effect transistors

MICRON TECHNOLOGY INC22 citations94

US9761580B1Sep 12, 2017

Methods of forming an array comprising pairs of vertically opposed capacitors and arrays comprising pairs of vertically opposed capacitors

MICRON TECHNOLOGY INC23 citations94

US9721639B1Aug 1, 2017

Memory cell imprint avoidance

MICRON TECHNOLOGY INC23 citations94

US9263577B2Feb 16, 2016

Ferroelectric field effect transistors, pluralities of ferroelectric field effect transistors arrayed in row lines and column lines, and methods of forming a plurality of ferroelectric field effect transistors

MICRON TECHNOLOGY INC35 citations94

US9608111B2Mar 28, 2017

Recessed transistors containing ferroelectric material

MICRON TECHNOLOGY INC13 citations93

US9159829B1Oct 13, 2015

Recessed transistors containing ferroelectric material

MICRON TECHNOLOGY INC24 citations93

US9773551B2Sep 26, 2017

Memory programming methods and memory systems

MICRON TECHNOLOGY INC16 citations92

US11552086B2Jan 10, 2023

Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic component comprising conductive material and ferroelectric material

MICRON TECHNOLOGY INC4 citations86

US11476252B2Oct 18, 2022

Memory device having 2-transistor vertical memory cell and shared channel region

MICRON TECHNOLOGY INC7 citations86

US11335684B2May 17, 2022

Memory device having 2-transistor memory cell and access line plate

MICRON TECHNOLOGY INC9 citations86

US11101271B2Aug 24, 2021

Array of cross point memory cells and methods of forming an array of cross point memory cells

MICRON TECHNOLOGY INC13 citations86

US10943953B2Mar 9, 2021

Semiconductor devices, hybrid transistors, and related methods

MICRON TECHNOLOGY INC9 citations86

US10892264B2Jan 12, 2021

Memory device having 2-transistor vertical memory cell

MICRON TECHNOLOGY INC11 citations86

US11201207B2Dec 14, 2021

Methods of forming an array of capacitors, methods of forming an array of memory cells individually comprising a capacitor and a transistor, arrays of capacitors, and arrays of memory cells individually comprising a capacitor and a transistor

MICRON TECHNOLOGY INC4 citations84

US10923657B2Feb 16, 2021

Methods of forming memory cells and memory devices

MICRON TECHNOLOGY INC5 citations84

US10879344B2Dec 29, 2020

Memory cells comprising ferroelectric material and including current leakage paths having different total resistances

MICRON TECHNOLOGY INC4 citations84

US10804273B2Oct 13, 2020

Memory arrays comprising vertically-alternating tiers of insulative material and memory cells and methods of forming a memory array

MICRON TECHNOLOGY INC10 citations84

US10777563B2Sep 15, 2020

Cell disturb prevention using a leaker device to reduce excess charge from an electronic device

MICRON TECHNOLOGY INC4 citations84

US10650978B2May 12, 2020

Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb

MICRON TECHNOLOGY INC7 citations84

US10622366B2Apr 14, 2020

Methods of forming an array comprising pairs of vertically opposed capacitors and arrays comprising pairs of vertically opposed capacitors

MICRON TECHNOLOGY INC10 citations84

US10529720B2Jan 7, 2020

Memory cell, an array of memory cells individually comprising a capacitor and a transistor with the array comprising rows of access lines and columns of digit lines, a 2T-1C memory cell, and methods of forming an array of capacitors and access transistors there-above

MICRON TECHNOLOGY INC8 citations84

US10443046B2Oct 15, 2019

Arrays of memory cells individually comprising a capacitor and an elevationally-extending transistor, methods of forming a tier of an array of memory cells, and methods of forming an array of memory cells individually comprising a capacitor and an elevationally-extending transistor

MICRON TECHNOLOGY INC6 citations84

US10217753B2Feb 26, 2019

Memory cells

MICRON TECHNOLOGY INC3 citations84

US10083732B2Sep 25, 2018

Memory cell imprint avoidance

MICRON TECHNOLOGY INC6 citations84

US10062426B2Aug 28, 2018

Field effect transistor constructions with gate insulator having local regions radially there-through that have different capacitance at different circumferential locations relative to a channel core periphery

MICRON TECHNOLOGY INC5 citations84

US10014305B2Jul 3, 2018

Methods of forming an array comprising pairs of vertically opposed capacitors and arrays comprising pairs of vertically opposed capacitors

MICRON TECHNOLOGY INC8 citations84

US10008541B2Jun 26, 2018

Memory arrays and methods of forming an array of memory cell

MICRON TECHNOLOGY INC4 citations84

US9928894B2Mar 27, 2018

Writing to cross-point non-volatile memory

MICRON TECHNOLOGY INC5 citations84

US9887204B2Feb 6, 2018

Memory cells

MICRON TECHNOLOGY INC4 citations84

US9853211B2Dec 26, 2017

Array of cross point memory cells individually comprising a select device and a programmable device

MICRON TECHNOLOGY INC13 citations84

US9673203B2Jun 6, 2017

Memory cells

MICRON TECHNOLOGY INC7 citations84

US9147689B1Sep 29, 2015

Methods of forming ferroelectric capacitors

MICRON TECHNOLOGY INC13 citations84

US9041090B2May 26, 2015

Methods for forming a string of memory cells and apparatuses having a vertical string of memory cells including metal

MICRON TECHNOLOGY INC15 citations84

US8929125B2Jan 6, 2015

Apparatus and methods for forming a memory cell using charge monitoring

MICRON TECHNOLOGY INC8 citations84

Showing the top 50 of 231 patents by PatentIndex Score.

RAMASWAMY DURAI VISHAK NIRMAL

Patents

Arrays of memory cells individually comprising a capacitor and an elevationally-extending transistor, methods of forming a tier of an array of memory cells, and methods of forming an array of memory cells individually comprising a capacitor and an elevationally-extending transistor

Writing to cross-point non-volatile memory

Memory cell and an array of memory cells

Memory cells

Memory arrays comprising vertically-alternating tiers of insulative material and memory cells and methods of forming a memory array comprising memory cells individually comprising a transistor and a capacitor

Memory arrays, ferroelectric transistors, and methods of reading and writing relative to memory cells of memory arrays

Memory cells comprising ferroelectric material and including current leakage paths having different total resistances

Transistors, arrays of transistors, arrays of memory cells individually comprising a capacitor and an elevationally-extending transistor, and methods of forming an array of transistors

Arrays of memory cells individually comprising a capacitor and a transistor and methods of forming such arrays

Cell disturb prevention using a leaker device to reduce excess charge from an electronic device

Methods of forming an array of capacitors, methods of forming an array of memory cells individually comprising a capacitor and a transistor, arrays of capacitors, and arrays of memory cells individually comprising a capacitor and a transistor

Integrated memory

Methods of forming an array comprising pairs of vertically opposed capacitors and arrays comprising pairs of vertically opposed capacitors

Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic component comprising conductive material and ferroelectric material

Memory cell, an array of memory cells individually comprising a capacitor and a transistor with the array comprising rows of access lines and columns of digit lines, a 2T-1C memory cell, and methods of forming an array of capacitors and access transistors there-above

Cell performance recovery using cycling techniques

Ferroelectric field effect transistors, pluralities of ferroelectric field effect transistors arrayed in row lines and column lines, and methods of forming a plurality of ferroelectric field effect transistors

Methods of forming an array comprising pairs of vertically opposed capacitors and arrays comprising pairs of vertically opposed capacitors

Memory cell imprint avoidance

Ferroelectric field effect transistors, pluralities of ferroelectric field effect transistors arrayed in row lines and column lines, and methods of forming a plurality of ferroelectric field effect transistors

Recessed transistors containing ferroelectric material

Recessed transistors containing ferroelectric material

Memory programming methods and memory systems

Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic component comprising conductive material and ferroelectric material

Memory device having 2-transistor vertical memory cell and shared channel region

Memory device having 2-transistor memory cell and access line plate

Array of cross point memory cells and methods of forming an array of cross point memory cells

Semiconductor devices, hybrid transistors, and related methods

Memory device having 2-transistor vertical memory cell

Methods of forming an array of capacitors, methods of forming an array of memory cells individually comprising a capacitor and a transistor, arrays of capacitors, and arrays of memory cells individually comprising a capacitor and a transistor

Methods of forming memory cells and memory devices

Memory cells comprising ferroelectric material and including current leakage paths having different total resistances

Memory arrays comprising vertically-alternating tiers of insulative material and memory cells and methods of forming a memory array

Cell disturb prevention using a leaker device to reduce excess charge from an electronic device

Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb

Methods of forming an array comprising pairs of vertically opposed capacitors and arrays comprising pairs of vertically opposed capacitors

Memory cell, an array of memory cells individually comprising a capacitor and a transistor with the array comprising rows of access lines and columns of digit lines, a 2T-1C memory cell, and methods of forming an array of capacitors and access transistors there-above

Arrays of memory cells individually comprising a capacitor and an elevationally-extending transistor, methods of forming a tier of an array of memory cells, and methods of forming an array of memory cells individually comprising a capacitor and an elevationally-extending transistor

Memory cells

Memory cell imprint avoidance

Field effect transistor constructions with gate insulator having local regions radially there-through that have different capacitance at different circumferential locations relative to a channel core periphery

Methods of forming an array comprising pairs of vertically opposed capacitors and arrays comprising pairs of vertically opposed capacitors

Memory arrays and methods of forming an array of memory cell

Writing to cross-point non-volatile memory

Memory cells

Array of cross point memory cells individually comprising a select device and a programmable device

Memory cells

Methods of forming ferroelectric capacitors

Methods for forming a string of memory cells and apparatuses having a vertical string of memory cells including metal

Apparatus and methods for forming a memory cell using charge monitoring