Inventor
MEYER RENE
US27 patents
⚠️ This page may combine multiple inventors who share the name “MEYER RENE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITY SEMICONDUCTOR CORP
12 patentsUS8848425B2Sep 30, 2014
Conductive metal oxide structures in non volatile re-writable memory devices
UNITY SEMICONDUCTOR CORP59 citations98
US8045364B2Oct 25, 2011
Non-volatile memory device ion barrier
UNITY SEMICONDUCTOR CORP121 citations98
US8031509B2Oct 4, 2011
Conductive metal oxide structures in non-volatile re-writable memory devices
UNITY SEMICONDUCTOR CORP13 citations92
US8003511B2Aug 23, 2011
Memory cell formation using ion implant isolated conductive metal oxide
UNITY SEMICONDUCTOR CORP26 citations92
US9818799B2Nov 14, 2017
Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells
UNITY SEMICONDUCTOR CORP4 citations84
US8031510B2Oct 4, 2011
Ion barrier cap
UNITY SEMICONDUCTOR CORP9 citations84
US9767897B2Sep 19, 2017
Conductive metal oxide structures in non-volatile re-writable memory devices
UNITY SEMICONDUCTOR CORP1 citations63
US9484533B2Nov 1, 2016
Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells
UNITY SEMICONDUCTOR CORP1 citations63
US9293702B2Mar 22, 2016
Conductive metal oxide structures in non-volatile re-writable memory devices
UNITY SEMICONDUCTOR CORP1 citations63
US8358529B2Jan 22, 2013
Conductive metal oxide structures in non-volatile re-writable memory devices
UNITY SEMICONDUCTOR CORP1 citations63
US10803935B2Oct 13, 2020
Conductive metal oxide structures in non-volatile re-writable memory devices
UNITY SEMICONDUCTOR CORP0 citations52
US10311950B2Jun 4, 2019
Conductive metal oxide structures in non-volatile re-writable memory devices
UNITY SEMICONDUCTOR CORP0 citations52
HEFEI RELIANCE MEMORY LTD
5 patentsUS10186553B2Jan 22, 2019
Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells
HEFEI RELIANCE MEMORY LTD6 citations84
US11765914B2Sep 19, 2023
Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells
HEFEI RELIANCE MEMORY LTD0 citations62
US11289542B2Mar 29, 2022
Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells
HEFEI RELIANCE MEMORY LTD0 citations62
US11037987B2Jun 15, 2021
Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells
HEFEI RELIANCE MEMORY LTD0 citations62
US10535714B2Jan 14, 2020
Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells
HEFEI RELIANCE MEMORY LTD0 citations52
SCHLOSS LAWRENCE
4 patentsUS8565006B2Oct 22, 2013
Conductive metal oxide structures in non volatile re writable memory devices
SCHLOSS LAWRENCE2 citations62
US8320161B2Nov 27, 2012
Conductive metal oxide structures in non volatile re writable memory devices
SCHLOSS LAWRENCE3 citations62
US8274817B2Sep 25, 2012
Non volatile memory device ion barrier
SCHLOSS LAWRENCE3 citations61
US8493771B2Jul 23, 2013
Non-volatile memory device ion barrier
SCHLOSS LAWRENCE0 citations51