Inventor
BAE SEUNG JUN
KR87 patents
⚠️ This page may combine multiple inventors who share the name “BAE SEUNG JUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
28 patentsUS7868790B2Jan 11, 2011
Single ended pseudo differential interconnection circuit and single ended pseudo differential signaling method
SAMSUNG ELECTRONICS CO LTD50 citations98
US8045663B2Oct 25, 2011
Circuit and method for removing skew in data transmitting/receiving system
SAMSUNG ELECTRONICS CO LTD26 citations93
US7495587B2Feb 24, 2009
Low power balance code using data bus inversion
SAMSUNG ELECTRONICS CO LTD29 citations93
US7772907B2Aug 10, 2010
Linear digital phase interpolator and semi-digital delay locked loop (DLL)
SAMSUNG ELECTRONICS CO LTD26 citations92
US7822111B2Oct 26, 2010
Receiving apparatus and method thereof
SAMSUNG ELECTRONICS CO LTD28 citations91
US7688102B2Mar 30, 2010
Majority voter circuits and semiconductor devices including the same
SAMSUNG ELECTRONICS CO LTD40 citations91
US7902887B2Mar 8, 2011
Method and apparatus for tuning phase of clock signal
SAMSUNG ELECTRONICS CO LTD25 citations90
US9947378B2Apr 17, 2018
Semiconductor memory device, a memory module including the same, and a memory system including the same
SAMSUNG ELECTRONICS CO LTD4 citations84
US7957497B2Jun 7, 2011
Clock and data recovery circuits using random edge sampling and recovery method therefor
SAMSUNG ELECTRONICS CO LTD10 citations84
US7701257B2Apr 20, 2010
Data receiver and semiconductor device including the data receiver
SAMSUNG ELECTRONICS CO LTD11 citations84
US7649389B2Jan 19, 2010
Delay locked loop circuit, semiconductor device having the same and method of controlling the same
SAMSUNG ELECTRONICS CO LTD12 citations84
US7403040B2Jul 22, 2008
Reference voltage generators for reducing and/or eliminating termination mismatch
SAMSUNG ELECTRONICS CO LTD12 citations84
US10388399B2Aug 20, 2019
Memory device, memory system, and operating method of memory device
SAMSUNG ELECTRONICS CO LTD7 citations83
US8004328B2Aug 23, 2011
AC-coupling phase interpolator and delay-locked loop using the same
SAMSUNG ELECTRONICS CO LTD15 citations83
US7907693B2Mar 15, 2011
Semiconductor device, a parallel interface system and methods thereof
SAMSUNG ELECTRONICS CO LTD11 citations83
US7852706B2Dec 14, 2010
Circuit and methods for eliminating skew between signals in semiconductor integrated circuit
SAMSUNG ELECTRONICS CO LTD5 citations74
US7768298B2Aug 3, 2010
Reference voltage generators for reducing and/or eliminating termination mismatch
SAMSUNG ELECTRONICS CO LTD7 citations74
US7542372B2Jun 2, 2009
Circuit and methods for eliminating skew between signals in semiconductor integrated circuit
SAMSUNG ELECTRONICS CO LTD6 citations74
US7492288B2Feb 17, 2009
Transmitting/receiving methods and systems for DC balance encoded data including simultaneous switching noise reducing preambles
SAMSUNG ELECTRONICS CO LTD6 citations74
US10884852B2Jan 5, 2021
Semiconductor memory devices, memory systems and methods of operating semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD4 citations73
US10573356B2Feb 25, 2020
Semiconductor memory devices, memory systems and methods of operating semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD6 citations73
US9755503B2Sep 5, 2017
Semiconductor device for controlling power-up sequences
SAMSUNG ELECTRONICS CO LTD6 citations73
US9608631B2Mar 28, 2017
Semiconductor memory device, a memory module including the same, and a memory system including the same
SAMSUNG ELECTRONICS CO LTD3 citations73
US7541947B2Jun 2, 2009
Semiconductor devices, a system including semiconductor devices and methods thereof
SAMSUNG ELECTRONICS CO LTD7 citations73
US9264039B2Feb 16, 2016
Circuit and method for on-die termination, and semiconductor memory device including the same
SAMSUNG ELECTRONICS CO LTD3 citations72
US9183902B2Nov 10, 2015
Input data alignment circuit and semiconductor device including the same
SAMSUNG ELECTRONICS CO LTD6 citations72
US9048855B2Jun 2, 2015
Method and apparatus for parallel data interfacing using combined coding and recording medium therefor
SAMSUNG ELECTRONICS CO LTD4 citations71
US7936289B2May 3, 2011
Method, device, and system for data communication with preamble for reduced switching noise
SAMSUNG ELECTRONICS CO LTD6 citations71
OH TAE-YOUNG
3 patentsUS8593901B2Nov 26, 2013
Data write training method
OH TAE-YOUNG21 citations92
US8437216B2May 7, 2013
Data write training method and semiconductor device performing the same
OH TAE-YOUNG17 citations92
US8654593B2Feb 18, 2014
Stacked semiconductor memory device, memory system including the same, and method of repairing defects of through silicon vias
OH TAE-YOUNG14 citations82
BAE SEUNG JUN
3 patentsUS8242819B2Aug 14, 2012
Method and apparatus for tuning phase of clock signal
BAE SEUNG JUN16 citations89
US8552891B2Oct 8, 2013
Method and apparatus for parallel data interfacing using combined coding and recording medium therefor
BAE SEUNG JUN6 citations82
US8269537B2Sep 18, 2012
Data transfer circuit and method with compensated clock jitter
BAE SEUNG JUN5 citations72
BAE SEUNG-JUN
3 patentsUS8161331B2Apr 17, 2012
Data training system and method thereof
BAE SEUNG-JUN7 citations84
US8335291B2Dec 18, 2012
Semiconductor device, a parallel interface system and methods thereof
BAE SEUNG-JUN11 citations83
US8390317B2Mar 5, 2013
Bidirectional equalizer with CMOS inductive bias circuit
BAE SEUNG-JUN5 citations72
PARK HO JOO
3 patentsPOSTECH
2 patentsLG ELECTRONICS INC
1 patentPOSTECH FOUNDATION
1 patentPOSTECH FOUNDATION AND POSTECH
1 patentSOHN YOUNG-SOO
1 patentKIM SI-HONG
1 patentSEOL HO-SEOK
1 patentKIM JIN-GOOK
1 patentKIM DONG-MIN
1 patentShowing the top 50 of 87 patents by PatentIndex Score.