Inventor
WANG ZHIHAI
CN44 patents
⚠️ This page may combine multiple inventors who share the name “WANG ZHIHAI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LSI LOGIC CORP
22 patentsUS6028015AFeb 22, 2000
Process for treating damaged surfaces of low dielectric constant organo silicon oxide insulation material to inhibit moisture absorption
LSI LOGIC CORP173 citations99
US6881664B2Apr 19, 2005
Process for planarizing upper surface of damascene wiring structure for integrated circuit structures
LSI LOGIC CORP75 citations98
US5660682AAug 26, 1997
Plasma clean with hydrogen gas
LSI LOGIC CORP100 citations98
US6727177B1Apr 27, 2004
Multi-step process for forming a barrier film for use in copper layer formation
LSI LOGIC CORP58 citations96
US5770520AJun 23, 1998
Method of making a barrier layer for via or contact opening of integrated circuit structure
LSI LOGIC CORP57 citations96
US5902129AMay 11, 1999
Process for forming improved cobalt silicide layer on integrated circuit structure using two capping layers
LSI LOGIC CORP87 citations95
US6368979B1Apr 9, 2002
Process for forming trenches and vias in layers of low dielectric constant carbon-doped silicon oxide dielectric material of an integrated circuit structure
LSI LOGIC CORP52 citations92
US6204550B1Mar 20, 2001
Method and composition for reducing gate oxide damage during RF sputter clean
LSI LOGIC CORP20 citations92
US6010952AJan 4, 2000
Process for forming metal silicide contacts using amorphization of exposed silicon while minimizing device degradation
LSI LOGIC CORP24 citations92
US5994211ANov 30, 1999
Method and composition for reducing gate oxide damage during RF sputter clean
LSI LOGIC CORP20 citations92
US5874342AFeb 23, 1999
Process for forming MOS device in integrated circuit structure using cobalt silicide contacts as implantation media
LSI LOGIC CORP69 citations92
US6174798B1Jan 16, 2001
Process for forming metal interconnect stack for integrated circuit structure
LSI LOGIC CORP15 citations83
US6734560B2May 11, 2004
Diamond barrier layer
LSI LOGIC CORP6 citations74
US6472314B1Oct 29, 2002
Diamond barrier layer
LSI LOGIC CORP12 citations74
US6736953B1May 18, 2004
High frequency electrochemical deposition
LSI LOGIC CORP8 citations73
US6569751B1May 27, 2003
Low via resistance system
LSI LOGIC CORP9 citations73
US6087726AJul 11, 2000
Metal interconnect stack for integrated circuit structure
LSI LOGIC CORP14 citations73
US7081406B2Jul 25, 2006
Interconnect dielectric tuning
LSI LOGIC CORP4 citations63
US6767832B1Jul 27, 2004
In situ liner barrier
LSI LOGIC CORP5 citations63
US6489231B1Dec 3, 2002
Method for forming barrier and seed layer
LSI LOGIC CORP3 citations57
US6893962B2May 17, 2005
Low via resistance system
LSI LOGIC CORP0 citations51
US6518193B1Feb 11, 2003
Substrate processing system
LSI LOGIC CORP0 citations37
MAXIM INTEGRATED PRODUCTS
7 patentsUS9224884B2Dec 29, 2015
Light sensor having transparent substrate and diffuser formed therein
MAXIM INTEGRATED PRODUCTS3 citations73
US8809099B2Aug 19, 2014
Light sensor having IR cut interference filter with color filter integrated on-chip
MAXIM INTEGRATED PRODUCTS4 citations72
US9472696B1Oct 18, 2016
Light sensor having a contiguous IR suppression filter and transparent substrate
MAXIM INTEGRATED PRODUCTS2 citations62
US9224890B1Dec 29, 2015
Light sensor having transparent substrate with lens formed therein
MAXIM INTEGRATED PRODUCTS3 citations62
US8803270B2Aug 12, 2014
Light sensor having IR cut and color pass interference filter integrated on-chip
MAXIM INTEGRATED PRODUCTS3 citations62
US9472586B1Oct 18, 2016
Light sensor having transparent substrate and through-substrate vias and a contiguous IR suppression filter
MAXIM INTEGRATED PRODUCTS0 citations52
US9129874B1Sep 8, 2015
Light sensor having IR cut interference filter with color filter integrated on-chip
MAXIM INTEGRATED PRODUCTS0 citations51
KERNESS NICOLE D
4 patentsUS8779540B2Jul 15, 2014
Light sensor having transparent substrate with lens formed therein
KERNESS NICOLE D20 citations92
US8749007B1Jun 10, 2014
Light sensor having transparent substrate and diffuser formed therein
KERNESS NICOLE D10 citations92
US8803068B2Aug 12, 2014
Light sensor having a contiguous IR suppression filter and a transparent substrate
KERNESS NICOLE D9 citations83
US8791404B2Jul 29, 2014
Light sensor having a transparent substrate, a contiguous IR suppression filter and through-substrate vias
KERNESS NICOLE D8 citations83
LSI CORP
3 patentsUS7413984B2Aug 19, 2008
Multi-step process for forming a barrier film for use in copper layer formation
LSI CORP6 citations74
US7229923B2Jun 12, 2007
Multi-step process for forming a barrier film for use in copper layer formation
LSI CORP9 citations74
US7259462B1Aug 21, 2007
Interconnect dielectric tuning
LSI CORP0 citations52