Inventor
YOKOYAMA YUJI
JP61 patents
⚠️ This page may combine multiple inventors who share the name “YOKOYAMA YUJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI LTD
16 patentsUS6430103B2Aug 6, 2002
Semiconductor integrated circuit device with memory banks and read buffer capable of storing data read out from one memory bank when data of another memory bank is outputting
HITACHI LTD115 citations97
US6570800B2May 27, 2003
High speed clock synchronous semiconductor memory in which the column address strobe signal is varied in accordance with a clock signal
HITACHI LTD69 citations96
US5398318AMar 14, 1995
High speed, low noise output buffer with non-identical pairs of output transistors
HITACHI LTD26 citations93
US6714477B2Mar 30, 2004
Semiconductor integrated circuit device with memory blocks and a write buffer capable of storing write data from an external interface
HITACHI LTD17 citations92
US5787043AJul 28, 1998
Semiconductor memory device having a redundancy capability
HITACHI LTD24 citations92
US6191990B1Feb 20, 2001
Semiconductor integrated circuit device having stabilizing capacitors connected between power lines of main amplifiers
HITACHI LTD35 citations90
US5680066AOct 21, 1997
Signal transition detector circuit
HITACHI LTD15 citations82
US5619151AApr 8, 1997
Semiconductor device
HITACHI LTD14 citations74
US5387827AFeb 7, 1995
Semiconductor integrated circuit having logic gates
HITACHI LTD13 citations74
US5619455AApr 8, 1997
Pipeline-operating type memory system capable of reading data from a memory array having data width larger than the output data width
HITACHI LTD10 citations73
US5091883AFeb 25, 1992
Semiconductor memory and microprocessor
HITACHI LTD7 citations72
US5675548AOct 7, 1997
Semiconductor integrated circuit having logi gates
HITACHI LTD4 citations63
US5544125AAug 6, 1996
Semiconductor integrated circuit having logic gates
HITACHI LTD4 citations63
US5304868AApr 19, 1994
Non-inverting buffer circuit device and semiconductor memory circuit device
HITACHI LTD3 citations63
US5602782AFeb 11, 1997
Pipeline-operating type memory system capable of reading data from a memory array having data width larger than the output data width
HITACHI LTD1 citations52
US5502820AMar 26, 1996
Microprocessor having high speed, low noise output buffers
HITACHI LTD0 citations52
TOYOTA MOTOR CO LTD
10 patentsUS9515313B2Dec 6, 2016
Nonaqueous electrolyte secondary battery and method of producing same
TOYOTA MOTOR CO LTD13 citations84
US9647261B2May 9, 2017
Non-aqueous electrolyte secondary battery
TOYOTA MOTOR CO LTD2 citations73
US9761853B2Sep 12, 2017
Non-aqueous electrolyte secondary battery
TOYOTA MOTOR CO LTD2 citations72
US10971711B2Apr 6, 2021
Separator and non-aqueous electrolyte secondary battery
TOYOTA MOTOR CO LTD0 citations62
US10964970B2Mar 30, 2021
Non-aqueous electrolytic secondary battery and method of manufacturing the same
TOYOTA MOTOR CO LTD1 citations62
US10763498B2Sep 1, 2020
Negative electrode and non-aqueous electrolyte secondary battery including the same
TOYOTA MOTOR CO LTD1 citations62
US11011738B2May 18, 2021
Method for producing negative electrode and secondary battery, and secondary battery
TOYOTA MOTOR CO LTD0 citations52
US10056617B2Aug 21, 2018
Secondary battery
TOYOTA MOTOR CO LTD1 citations52
US9905846B2Feb 27, 2018
Lithium ion secondary battery
TOYOTA MOTOR CO LTD1 citations52
US11641017B2May 2, 2023
Non-aqueous electrolyte secondary battery having an intermediate layer comprising metal-covered microcapsules
TOYOTA MOTOR CO LTD0 citations51
FUJITSU LTD
6 patentsUS6936510B2Aug 30, 2005
Semiconductor device with self-aligned contact and its manufacture
FUJITSU LTD12 citations92
US6285045B1Sep 4, 2001
Semiconductor device with self-aligned contact and its manufacture
FUJITSU LTD31 citations92
US6620674B1Sep 16, 2003
Semiconductor device with self-aligned contact and its manufacture
FUJITSU LTD4 citations73
US6962863B2Nov 8, 2005
Semiconductor device having interconnection layer with multiply layered sidewall insulation film
FUJITSU LTD2 citations63
US7151025B2Dec 19, 2006
Method of manufacturing a semiconductor device with self-aligned contacts
FUJITSU LTD0 citations52
US6703715B2Mar 9, 2004
Semiconductor device having interconnection layer with multiply layered sidewall insulation film
FUJITSU LTD1 citations52
PANASONIC CORP
4 patentsUS12266784B2Apr 1, 2025
Negative electrode for nonaqueous electrolyte secondary battery, and nonaqueous electrolyte secondary battery
PANASONIC CORP0 citations51
US11728471B2Aug 15, 2023
Negative electrode for nonaqueous electrolyte secondary battery, and nonaqueous electrolyte secondary battery
PANASONIC CORP0 citations51
US11728472B2Aug 15, 2023
Negative electrode for nonaqueous electrolyte secondary battery, and nonaqueous electrolyte secondary battery
PANASONIC CORP0 citations51
US11721802B2Aug 8, 2023
Negative electrode for nonaqueous electrolyte secondary battery, and nonaqueous electrolyte secondary battery
PANASONIC CORP0 citations51
TEXAS INSTRUMENTS INC
1 patentHITAHI LTD
1 patentENPLAS CORP
1 patentYOKOYAMA YUJI
1 patentRENESAS TECH CORP
1 patentMORITA MASAHIRO
1 patentNIPPON OILS & FATS CO LTD
1 patentPANASONIC IP MAN CO LTD
1 patentKAWASAKI MOTORS LTD
1 patentMURATA MANUFACTURING CO
1 patentGLOBERIDE INC
1 patentHITACHI ULSI SYS CO LTD
1 patentAIST
1 patentSHINOMIYA TOSHIO
1 patentShowing the top 50 of 61 patents by PatentIndex Score.