Inventor

PROBST DEAN E

US40 patents

⚠️ This page may combine multiple inventors who share the name “PROBST DEAN E”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PROBST DEAN E

SEMICONDUCTOR COMPONENTS IND LLC

Trench MOSFET contacts

Semiconductor device and structure therefor

Trench MOSFET contacts

Method of forming a semiconductor device and structure therefor

Power transistors with resonant clamping circuits

Reverse recovery charge reduction in semiconductor devices

Reverse recovery charge reduction in semiconductor devices

Reverse recovery charge reduction in semiconductor devices

Integrated transistor and resistor-diode-capacitor snubber

Method of forming a semiconductor device

Process of forming an electronic device including a component structure adjacent to a trench

Transistor device having a pillar structure

Electronic device including a charge storage component

Electronic device including doped regions and a trench between the doped regions

Stacked transistor assembly with dual middle mounting clips

FAIRCHILD SEMICONDUCTOR

Trench-gate field effect transistors and methods of forming the same

Field effect transistor and method of its manufacture

Method of forming trench-gate field effect transistors

Trench-gate field effect transistor with channel enhancement region and methods of forming the same

Trench FET with improved body to gate alignment

Method of manufacturing a trench transistor having a heavy body region

Trench-based power semiconductor devices with increased breakdown voltage characteristics

Trench-gate field effect transistor

Trench-based power semiconductor devices with increased breakdown voltage characteristics

Trench-based power semiconductor devices with increased breakdown voltage characteristics

Shield contacts in a shielded gate MOSFET

Trench-based power semiconductor devices with increased breakdown voltage characteristics

Method of manufacturing a trench transistor having a heavy body region

Method of manufacturing a trench transistor having a heavy body region

YEDINAK JOSEPH A

Trench-based power semiconductor devices with increased breakdown voltage characteristics

Trench-based power semiconductor devices with increased breakdown voltage characteristics

Trench-based power semiconductor devices with increased breakdown voltage characteristics

Trench-based power semiconductor devices with increased breakdown voltage characteristics

CHALLA ASHOK

Methods of making power semiconductor devices with thick bottom oxide layer

Methods related to power semiconductor devices with thick bottom oxide layers

GREBS THOMAS E

Trench-shielded semiconductor device

PROBST DEAN E

Inter-poly dielectric in a shielded gate MOSFET device

YILMAZ HAMZA

Structure and method for forming trench-gate field effect transistor with source plug

PAN JAMES

High density trench field effect transistor

DUNN DIXIE

Shield contacts in a shielded gate MOSFET