Inventor

JANTSCHER WOLFGANG

AT17 patents

⚠️ This page may combine multiple inventors who share the name “JANTSCHER WOLFGANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

JANTSCHER WOLFGANG

INFINEON TECHNOLOGIES AG

Method of manufacturing a semiconductor device including proton irradiation and semiconductor device including charge compensation structure

Semiconductor device including trench gate structure and buried shielding region and method of manufacturing

Silicon carbide device with trench gate structure

Semiconductor device including trench gate structure and buried shielding region and method of manufacturing

Silicon carbide device with transistor cell and clamp region

Silicon carbide device with trench gate structure and method of manufacturing

SiC-based superjunction semiconductor device

SiC-based superjunction semiconductor device

Silicon carbide device with transistor cell and clamp regions in a well region

INFINEON TECHNOLOGIES AUSTRIA AG

Semiconductor wafer and method of manufacturing semiconductor devices in a semiconductor wafer

VDMOS having a non-depletable extension zone formed between an active area and side surface of semiconductor body

Methods for manufacturing a MOSFET

Methods for manufacturing a MOSFET

Semiconductor wafer and method of manufacturing semiconductor devices in a semiconductor wafer

Forming recombination centers in a semiconductor device

INFINEON TECH DRESDEN GMBH & CO KG

Method for producing a transistor device having a superjunction structure

Method for forming a superjunction transistor device