Inventor

OH SECHUNG

KR50 patents

⚠️ This page may combine multiple inventors who share the name “OH SECHUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

OH SECHUNG

SAMSUNG ELECTRONICS CO LTD

Magnetic memory devices including magnetic layers having different products of saturated magnetization and thickness and related methods

Semiconductor devices and methods of fabricating the same

Magnetic memory device

Magnetic memory devices having perpendicular magnetic tunnel structures therein

Semiconductor device having magnetic tunnel junction structure and method of fabricating the same

Magnetoresistive random access memory device having a metal layer doped with a magnetic material

Semiconductor devices having oxidation control layer

Magnetic device

Semiconductor device including blocking layer

Method of manufacturing a magnetoresistive random access memory device

Magnetic memory device

Semiconductor devices and methods of fabricating the same

Magnetic memory device

Magnetic memory device

Semiconductor devices having metal oxide patterns

Magnetic device

Magnetic memory devices

OH SECHUNG

Magnetic memory devices having a uniform perpendicular nonmagnetic metal rich anisotropy enhanced pattern

Magnetic memory devices having a uniform perpendicular nonmagnetic rich antisotropy enhanced pattern

Magnetic memory devices including magnetic layers separated by tunnel barriers

Magnetic memory devices having a uniform perpendicular nonmagnetic rich antisotropy enhanced pattern

Magnetic memory devices including magnetic layers separated by tunnel barriers

Magnetic devices having perpendicular magnetic tunnel junction

Magnetic devices having perpendicular magnetic tunnel junction

Magnetic memory devices

Magnetic devices having perpendicular magnetic tunnel junction

Magnetic tunnel junction memory devices including crystallized boron-including first magnetic layer on a tunnel barrier layer and lower boron-content second magnetic layer on the first magnetic layer

KIM WOOJIN

Magnetic memory devices

Method of fabricating semiconductor device and apparatus for fabricating the same

Magnetic memory devices and methods of manufacturing such magnetic memory devices

Magnetic memory devices

NAM KYUNGTAE

Magnetic memory devices with thin conductive bridges

Methods of fabricating magnetic memory devices with thin conductive bridges

Magnetic memory device

Magnetic memory device

LEE JANGEUM

Magnetic memory device

Magnetic memory device

PARK JEONG HEON

Magnetic tunneling junction devices, memories, memory systems, and electronic devices

Magnetic tunneling junction devices, memories, electronic systems, and memory systems, and methods of fabricating the same

PARK YONGSUNG

Method and processing apparatus for fabricating a magnetic resistive random access memory device

Method and processing apparatus for fabricating a magnetic resistive random access memory device

PARK CHANJIN

Magnetic device and method of fabricating the same

KIM JUHYUN

Semiconductor device having magnetic tunnel junction structure and method of fabricating the same

KIM KI WOONG

Magnetic memory device and method of fabricating the same

PARK YONG SUNG

Methods of forming a layer and methods of manufacturing magnetic memory devices using the same

KIM KEEWON

Magnetic memory devices and methods of forming the same

LIM WOO CHANG

Magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of forming a perpendicular magnetic film of the same

LEE SUNG CHUL

Magnetic memory device

JEONG JUNHO

Methods of fabricating semiconductor devices

KIM SANGYONG

Magnetic memory devices having perpendicular magnetic tunnel structures therein