Inventor
YANG CHUN-YI
TW28 patents
⚠️ This page may combine multiple inventors who share the name “YANG CHUN-YI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
12 patentsUS10312207B2Jun 4, 2019
Passivation scheme for pad openings and trenches
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US12002774B2Jun 4, 2024
Passivation scheme for pad openings and trenches
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11444046B2Sep 13, 2022
Passivation scheme for pad openings and trenches
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10804231B2Oct 13, 2020
Passivation scheme for pad openings and trenches
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9882046B2Jan 30, 2018
Ultra high voltage semiconductor device with electrostatic discharge capabilities
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US9608060B2Mar 28, 2017
Isolation structure for semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12424573B2Sep 23, 2025
Passivation scheme for pad openings and trenches
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11011462B2May 18, 2021
Method for forming fuse pad and bond pad of integrated circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12163995B2Dec 10, 2024
GaN reliability built-in self test (BIST) apparatus and method for qualifying dynamic on-state resistance degradation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations56
US11680978B2Jun 20, 2023
GaN reliability built-in self test (BIST) apparatus and method for qualifying dynamic on-state resistance degradation
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations56
US10840371B2Nov 17, 2020
Ultra high voltage semiconductor device with electrostatic discharge capabilities
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10461183B2Oct 29, 2019
Ultra high voltage semiconductor device with electrostatic discharge capabilities
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
MACRONIX INT CO LTD
11 patentsUS6397377B1May 28, 2002
Method of performing optical proximity corrections of a photo mask pattern by using a computer
MACRONIX INT CO LTD20 citations89
US6794253B2Sep 21, 2004
Mask ROM structure and method of fabricating the same
MACRONIX INT CO LTD16 citations77
US7192811B2Mar 20, 2007
Read-only memory device coded with selectively insulated gate electrodes
MACRONIX INT CO LTD8 citations73
US6468869B1Oct 22, 2002
Method of fabricating mask read only memory
MACRONIX INT CO LTD9 citations73
US6440803B1Aug 27, 2002
Method of fabricating a mask ROM with raised bit-line on each buried bit-line
MACRONIX INT CO LTD10 citations73
US6849526B2Feb 1, 2005
Method of improving device resistance
MACRONIX INT CO LTD6 citations69
US6821684B2Nov 23, 2004
Method for fabricating mask ROM with self-aligned coding
MACRONIX INT CO LTD2 citations62
US6649526B2Nov 18, 2003
Method for implanting and coding a read-only memory with automatic alignment at four corners
MACRONIX INT CO LTD2 citations62
US6166943ADec 26, 2000
Method of forming a binary code of a ROM
MACRONIX INT CO LTD3 citations61
US7838947B2Nov 23, 2010
Read-only memory device coded with selectively insulated gate electrodes
MACRONIX INT CO LTD0 citations52
US6720629B2Apr 13, 2004
Structure of a memory device with buried bit line
MACRONIX INT CO LTD1 citations48