Inventor
HUANG KUN-MING
TW46 patents
⚠️ This page may combine multiple inventors who share the name “HUANG KUN-MING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
29 patentsUS10312207B2Jun 4, 2019
Passivation scheme for pad openings and trenches
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US11374107B2Jun 28, 2022
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations83
US9941384B2Apr 10, 2018
Semiconductor device and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US12002774B2Jun 4, 2024
Passivation scheme for pad openings and trenches
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11444046B2Sep 13, 2022
Passivation scheme for pad openings and trenches
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10804231B2Oct 13, 2020
Passivation scheme for pad openings and trenches
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9882046B2Jan 30, 2018
Ultra high voltage semiconductor device with electrostatic discharge capabilities
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US9853121B2Dec 26, 2017
Method of fabricating a lateral insulated gate bipolar transistor
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US9698024B2Jul 4, 2017
Partial SOI on power device for breakdown voltage improvement
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US9608060B2Mar 28, 2017
Isolation structure for semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12424573B2Sep 23, 2025
Passivation scheme for pad openings and trenches
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12027603B2Jul 2, 2024
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11901433B2Feb 13, 2024
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11233121B2Jan 25, 2022
Method of making bipolar transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US9647065B2May 9, 2017
Bipolar transistor structure having split collector region and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12100754B2Sep 24, 2024
Semiconductor arrangement and method of making
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations60
US9558986B2Jan 31, 2017
Semiconductor structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10840371B2Nov 17, 2020
Ultra high voltage semiconductor device with electrostatic discharge capabilities
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10686036B2Jun 16, 2020
Method of making bipolar transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10686054B2Jun 16, 2020
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10461183B2Oct 29, 2019
Ultra high voltage semiconductor device with electrostatic discharge capabilities
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10134867B2Nov 20, 2018
Method for fabricating semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10049956B2Aug 14, 2018
Passivation structure and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10002761B2Jun 19, 2018
Method for forming a multiple layer epitaxial layer on a wafer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9761504B2Sep 12, 2017
Passivation structure and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9614031B2Apr 4, 2017
Methods for forming a high-voltage super junction by trench and epitaxial doping
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US9093520B2Jul 28, 2015
High-voltage super junction by trench and epitaxial doping
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US8975153B2Mar 10, 2015
Super junction trench metal oxide semiconductor device and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48
US9564515B2Feb 7, 2017
Semiconductor device having super junction structure and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations41
TAIWAN SEMICONDUCTOR MFG
9 patentsUS6479376B1Nov 12, 2002
Process improvement for the creation of aluminum contact bumps
TAIWAN SEMICONDUCTOR MFG29 citations91
US7221039B2May 22, 2007
Thin film transistor (TFT) device structure employing silicon rich silicon oxide passivation layer
TAIWAN SEMICONDUCTOR MFG21 citations90
US9312348B2Apr 12, 2016
Ultra high voltage semiconductor device with electrostatic discharge capabilities
TAIWAN SEMICONDUCTOR MFG3 citations72
US8779555B2Jul 15, 2014
Partial SOI on power device for breakdown voltage improvement
TAIWAN SEMICONDUCTOR MFG2 citations62
US7109090B1Sep 19, 2006
Pyramid-shaped capacitor structure
TAIWAN SEMICONDUCTOR MFG4 citations62
US9209102B2Dec 8, 2015
Passivation structure and method of making the same
TAIWAN SEMICONDUCTOR MFG3 citations61
US7888767B2Feb 15, 2011
Structures of high-voltage MOS devices with improved electrical performance
TAIWAN SEMICONDUCTOR MFG4 citations61
US7183171B2Feb 27, 2007
Pyramid-shaped capacitor structure
TAIWAN SEMICONDUCTOR MFG2 citations57
US9111898B2Aug 18, 2015
Multiple layer substrate
TAIWAN SEMICONDUCTOR MFG1 citations51