Inventor
CHU PO-TAO
TW45 patents
⚠️ This page may combine multiple inventors who share the name “CHU PO-TAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
33 patentsUS10312207B2Jun 4, 2019
Passivation scheme for pad openings and trenches
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US11374107B2Jun 28, 2022
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations83
US10163707B2Dec 25, 2018
Method for forming group III-V device structure
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations83
US9941384B2Apr 10, 2018
Semiconductor device and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US12002774B2Jun 4, 2024
Passivation scheme for pad openings and trenches
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11444046B2Sep 13, 2022
Passivation scheme for pad openings and trenches
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10804231B2Oct 13, 2020
Passivation scheme for pad openings and trenches
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9882046B2Jan 30, 2018
Ultra high voltage semiconductor device with electrostatic discharge capabilities
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US9666511B2May 30, 2017
Isolation method for a stand alone high voltage laterally-diffused metal-oxide semiconductor (LDMOS) transistor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US9608060B2Mar 28, 2017
Isolation structure for semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12424573B2Sep 23, 2025
Passivation scheme for pad openings and trenches
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12027603B2Jul 2, 2024
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11901433B2Feb 13, 2024
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11233121B2Jan 25, 2022
Method of making bipolar transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11114543B2Sep 7, 2021
Group III-V device structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US9647065B2May 9, 2017
Bipolar transistor structure having split collector region and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11189510B2Nov 30, 2021
Adaptive inset for wafer cassette system
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11183407B2Nov 23, 2021
Adaptive inset for wafer cassette system
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US9558986B2Jan 31, 2017
Semiconductor structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10840371B2Nov 17, 2020
Ultra high voltage semiconductor device with electrostatic discharge capabilities
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10686054B2Jun 16, 2020
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10686036B2Jun 16, 2020
Method of making bipolar transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10461183B2Oct 29, 2019
Ultra high voltage semiconductor device with electrostatic discharge capabilities
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10134867B2Nov 20, 2018
Method for fabricating semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10002761B2Jun 19, 2018
Method for forming a multiple layer epitaxial layer on a wafer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9748377B2Aug 29, 2017
Semiconductor device and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10535541B2Jan 14, 2020
Adaptive inset for wafer cassette system
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US9614031B2Apr 4, 2017
Methods for forming a high-voltage super junction by trench and epitaxial doping
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US9093520B2Jul 28, 2015
High-voltage super junction by trench and epitaxial doping
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US8975153B2Mar 10, 2015
Super junction trench metal oxide semiconductor device and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48
US9985094B2May 29, 2018
Super junction with an angled trench, transistor having the super junction and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations41
US9564515B2Feb 7, 2017
Semiconductor device having super junction structure and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations41
US9698256B2Jul 4, 2017
Termination of super junction power MOSFET
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations40
TAIWAN SEMICONDUCTOR MFG
12 patentsUS6006764ADec 28, 1999
Method of stripping photoresist from Al bonding pads that prevents corrosion
TAIWAN SEMICONDUCTOR MFG73 citations95
US5746928AMay 5, 1998
Process for cleaning an electrostatic chuck of a plasma etching apparatus
TAIWAN SEMICONDUCTOR MFG75 citations94
US6051505AApr 18, 2000
Plasma etch method for forming metal-fluoropolymer residue free vias through silicon containing dielectric layers
TAIWAN SEMICONDUCTOR MFG31 citations89
US5672543ASep 30, 1997
Volcano defect-free tungsten plug
TAIWAN SEMICONDUCTOR MFG29 citations88
US5554563ASep 10, 1996
In situ hot bake treatment that prevents precipitate formation after a contact layer etch back step
TAIWAN SEMICONDUCTOR MFG11 citations73
US9312348B2Apr 12, 2016
Ultra high voltage semiconductor device with electrostatic discharge capabilities
TAIWAN SEMICONDUCTOR MFG3 citations72
US6077776AJun 20, 2000
Polysilicon residue free process by thermal treatment
TAIWAN SEMICONDUCTOR MFG9 citations72
US8779555B2Jul 15, 2014
Partial SOI on power device for breakdown voltage improvement
TAIWAN SEMICONDUCTOR MFG2 citations62
US9166046B2Oct 20, 2015
Semiconductor device and method of manufacturing
TAIWAN SEMICONDUCTOR MFG3 citations61
US6743735B2Jun 1, 2004
Photoresist removal from alignment marks through wafer edge exposure
TAIWAN SEMICONDUCTOR MFG4 citations59
US5604134AFeb 18, 1997
Particle monitoring method for plasma reactors with moving gas distribution housings
TAIWAN SEMICONDUCTOR MFG5 citations56
US9184282B2Nov 10, 2015
Ultra-high voltage laterally-diffused MOS devices and methods of forming the same
TAIWAN SEMICONDUCTOR MFG0 citations39