Inventor
WANG SHEN-PING
TW29 patents
⚠️ This page may combine multiple inventors who share the name “WANG SHEN-PING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
22 patentsUS10312207B2Jun 4, 2019
Passivation scheme for pad openings and trenches
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US11374107B2Jun 28, 2022
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations83
US10163707B2Dec 25, 2018
Method for forming group III-V device structure
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations83
US9941384B2Apr 10, 2018
Semiconductor device and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US12002774B2Jun 4, 2024
Passivation scheme for pad openings and trenches
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11444046B2Sep 13, 2022
Passivation scheme for pad openings and trenches
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10804231B2Oct 13, 2020
Passivation scheme for pad openings and trenches
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9882046B2Jan 30, 2018
Ultra high voltage semiconductor device with electrostatic discharge capabilities
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US9666511B2May 30, 2017
Isolation method for a stand alone high voltage laterally-diffused metal-oxide semiconductor (LDMOS) transistor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US9608060B2Mar 28, 2017
Isolation structure for semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12424573B2Sep 23, 2025
Passivation scheme for pad openings and trenches
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12027603B2Jul 2, 2024
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11901433B2Feb 13, 2024
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11114543B2Sep 7, 2021
Group III-V device structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10840371B2Nov 17, 2020
Ultra high voltage semiconductor device with electrostatic discharge capabilities
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10686054B2Jun 16, 2020
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10461183B2Oct 29, 2019
Ultra high voltage semiconductor device with electrostatic discharge capabilities
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10134867B2Nov 20, 2018
Method for fabricating semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9748377B2Aug 29, 2017
Semiconductor device and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9985094B2May 29, 2018
Super junction with an angled trench, transistor having the super junction and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations41
US9564515B2Feb 7, 2017
Semiconductor device having super junction structure and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations41
US9698256B2Jul 4, 2017
Termination of super junction power MOSFET
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations40
TAIWAN SEMICONDUCTOR MFG
6 patentsUS9312348B2Apr 12, 2016
Ultra high voltage semiconductor device with electrostatic discharge capabilities
TAIWAN SEMICONDUCTOR MFG3 citations72
US7057794B2Jun 6, 2006
Micromirror for MEMS device
TAIWAN SEMICONDUCTOR MFG9 citations71
US9166046B2Oct 20, 2015
Semiconductor device and method of manufacturing
TAIWAN SEMICONDUCTOR MFG3 citations61
US7139111B1Nov 21, 2006
Micromirrors for micro-electro-mechanical systems and methods of fabricating the same
TAIWAN SEMICONDUCTOR MFG0 citations49
US7541280B2Jun 2, 2009
Method of foming a micromechanical structure
TAIWAN SEMICONDUCTOR MFG1 citations45
US9184282B2Nov 10, 2015
Ultra-high voltage laterally-diffused MOS devices and methods of forming the same
TAIWAN SEMICONDUCTOR MFG0 citations39