P

Inventor

HUNG FENG-CHI

TW140 patents
⚠️ This page may combine multiple inventors who share the name “HUNG FENG-CHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

41 patents
US9728521B2Aug 8, 2017

Hybrid bond using a copper alloy for yield improvement

TAIWAN SEMICONDUCTOR MFG CO LTD227 citations98
US9704827B2Jul 11, 2017

Hybrid bond pad structure

TAIWAN SEMICONDUCTOR MFG CO LTD32 citations98
US10515990B2Dec 24, 2019

Semiconductor devices having reduced noise

TAIWAN SEMICONDUCTOR MFG CO LTD11 citations93
US9666624B2May 30, 2017

Mechanisms for forming image-sensor device with deep-trench isolation structure

TAIWAN SEMICONDUCTOR MFG CO LTD13 citations93
US9136298B2Sep 15, 2015

Mechanisms for forming image-sensor device with deep-trench isolation structure

TAIWAN SEMICONDUCTOR MFG CO LTD15 citations93
US9449914B2Sep 20, 2016

Stacked integrated circuits with redistribution lines

TAIWAN SEMICONDUCTOR MFG CO LTD21 citations92
US11596800B2Mar 7, 2023

Interconnect structure and method of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11069736B2Jul 20, 2021

Via support structure under pad areas for BSI bondability improvement

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10672819B2Jun 2, 2020

Mechanisms for forming image-sensor device with deep-trench isolation structure

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US10622394B2Apr 14, 2020

Image sensing device

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10566374B2Feb 18, 2020

Via support structure under pad areas for BSI bondability improvement

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10461109B2Oct 29, 2019

Multiple deep trench isolation (MDTI) structure for CMOS image sensor

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10283549B2May 7, 2019

Via support structure under pad areas for BSI bondability improvement

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10153316B2Dec 11, 2018

Mechanisms for forming image sensor device with deep-trench isolation structure

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10038026B2Jul 31, 2018

Bond pad structure for bonding improvement

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10038025B2Jul 31, 2018

Via support structure under pad areas for BSI bondability improvement

TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US10014340B2Jul 3, 2018

Stacked SPAD image sensor

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9871070B2Jan 16, 2018

Voltage biased metal shielding and deep trench isolation for backside illuminated (BSI) image sensors

TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US9780137B2Oct 3, 2017

Mechanisms for forming image-sensor device with epitaxial isolation feature

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9764153B2Sep 19, 2017

Interconnect structure and method of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9666630B2May 30, 2017

Semiconductor devices, methods of manufacturing thereof, and image sensor devices

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9536777B2Jan 3, 2017

Interconnect apparatus and method

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9525001B2Dec 20, 2016

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US9455158B2Sep 27, 2016

3DIC interconnect devices and methods of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US10269768B2Apr 23, 2019

Stacked integrated circuits with redistribution lines

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US9666566B1May 30, 2017

3DIC structure and method for hybrid bonding semiconductor wafers

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US11791357B2Oct 17, 2023

Composite BSI structure and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations75
US11984465B2May 14, 2024

Multiple deep trench isolation (MDTI) structure for CMOS image sensor

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11901387B2Feb 13, 2024

Image sensor

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11804473B2Oct 31, 2023

Hybrid bond pad structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11342374B2May 24, 2022

Mechanisms for forming image-sensor device with deep-trench isolation structure

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11244981B2Feb 8, 2022

Bond pad structure for bonding improvement

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11211419B2Dec 28, 2021

Composite bsi structure and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11011567B2May 18, 2021

Structure and method for 3D image sensor

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10886320B2Jan 5, 2021

Mechanisms for forming image-sensor device with epitaxial isolation feature

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10861894B2Dec 8, 2020

Multiple deep trench isolation (MDTI) structure for CMOS image sensor

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10797091B2Oct 6, 2020

Semiconductor imaging device having improved dark current performance

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10727265B2Jul 28, 2020

Multiple deep trench isolation (MDTI) structure for CMOS image sensor

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10535706B2Jan 14, 2020

Interconnect structure for stacked device and method

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10475758B2Nov 12, 2019

Semiconductor device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10276622B2Apr 30, 2019

Mechanisms for forming image-sensor device with expitaxial isolation feature

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73

TAIWAN SEMICONDUCTOR MFG

6 patents

LIN JENG-SHYAN

1 patent

CHEN SZU-YING

1 patent

CHEN U-TING

1 patent

Showing the top 50 of 140 patents by PatentIndex Score.