Inventor
HUNG FENG-CHI
TW140 patents
⚠️ This page may combine multiple inventors who share the name “HUNG FENG-CHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
41 patentsUS9728521B2Aug 8, 2017
Hybrid bond using a copper alloy for yield improvement
TAIWAN SEMICONDUCTOR MFG CO LTD227 citations98
US9704827B2Jul 11, 2017
Hybrid bond pad structure
TAIWAN SEMICONDUCTOR MFG CO LTD32 citations98
US10515990B2Dec 24, 2019
Semiconductor devices having reduced noise
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations93
US9666624B2May 30, 2017
Mechanisms for forming image-sensor device with deep-trench isolation structure
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations93
US9136298B2Sep 15, 2015
Mechanisms for forming image-sensor device with deep-trench isolation structure
TAIWAN SEMICONDUCTOR MFG CO LTD15 citations93
US9449914B2Sep 20, 2016
Stacked integrated circuits with redistribution lines
TAIWAN SEMICONDUCTOR MFG CO LTD21 citations92
US11596800B2Mar 7, 2023
Interconnect structure and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11069736B2Jul 20, 2021
Via support structure under pad areas for BSI bondability improvement
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10672819B2Jun 2, 2020
Mechanisms for forming image-sensor device with deep-trench isolation structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US10622394B2Apr 14, 2020
Image sensing device
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10566374B2Feb 18, 2020
Via support structure under pad areas for BSI bondability improvement
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10461109B2Oct 29, 2019
Multiple deep trench isolation (MDTI) structure for CMOS image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10283549B2May 7, 2019
Via support structure under pad areas for BSI bondability improvement
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10153316B2Dec 11, 2018
Mechanisms for forming image sensor device with deep-trench isolation structure
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10038026B2Jul 31, 2018
Bond pad structure for bonding improvement
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10038025B2Jul 31, 2018
Via support structure under pad areas for BSI bondability improvement
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US10014340B2Jul 3, 2018
Stacked SPAD image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9871070B2Jan 16, 2018
Voltage biased metal shielding and deep trench isolation for backside illuminated (BSI) image sensors
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US9780137B2Oct 3, 2017
Mechanisms for forming image-sensor device with epitaxial isolation feature
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9764153B2Sep 19, 2017
Interconnect structure and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9666630B2May 30, 2017
Semiconductor devices, methods of manufacturing thereof, and image sensor devices
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9536777B2Jan 3, 2017
Interconnect apparatus and method
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9525001B2Dec 20, 2016
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US9455158B2Sep 27, 2016
3DIC interconnect devices and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US10269768B2Apr 23, 2019
Stacked integrated circuits with redistribution lines
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US9666566B1May 30, 2017
3DIC structure and method for hybrid bonding semiconductor wafers
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US11791357B2Oct 17, 2023
Composite BSI structure and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations75
US11984465B2May 14, 2024
Multiple deep trench isolation (MDTI) structure for CMOS image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11901387B2Feb 13, 2024
Image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11804473B2Oct 31, 2023
Hybrid bond pad structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11342374B2May 24, 2022
Mechanisms for forming image-sensor device with deep-trench isolation structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11244981B2Feb 8, 2022
Bond pad structure for bonding improvement
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11211419B2Dec 28, 2021
Composite bsi structure and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11011567B2May 18, 2021
Structure and method for 3D image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10886320B2Jan 5, 2021
Mechanisms for forming image-sensor device with epitaxial isolation feature
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10861894B2Dec 8, 2020
Multiple deep trench isolation (MDTI) structure for CMOS image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10797091B2Oct 6, 2020
Semiconductor imaging device having improved dark current performance
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10727265B2Jul 28, 2020
Multiple deep trench isolation (MDTI) structure for CMOS image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10535706B2Jan 14, 2020
Interconnect structure for stacked device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10475758B2Nov 12, 2019
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10276622B2Apr 30, 2019
Mechanisms for forming image-sensor device with expitaxial isolation feature
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
TAIWAN SEMICONDUCTOR MFG
6 patentsUS9123615B2Sep 1, 2015
Vertically integrated image sensor chips and methods for forming the same
TAIWAN SEMICONDUCTOR MFG11 citations93
US8736006B1May 27, 2014
Backside structure for a BSI image sensor device
TAIWAN SEMICONDUCTOR MFG31 citations93
US9312294B2Apr 12, 2016
Semiconductor devices, methods of manufacturing thereof, and image sensor devices
TAIWAN SEMICONDUCTOR MFG6 citations84
US9287312B2Mar 15, 2016
Imaging sensor structure and method
TAIWAN SEMICONDUCTOR MFG7 citations84
US9006080B2Apr 14, 2015
Varied STI liners for isolation structures in image sensing devices
TAIWAN SEMICONDUCTOR MFG8 citations84
US9041206B2May 26, 2015
Interconnect structure and method
TAIWAN SEMICONDUCTOR MFG11 citations83
LIN JENG-SHYAN
1 patentCHEN SZU-YING
1 patentCHEN U-TING
1 patentShowing the top 50 of 140 patents by PatentIndex Score.