Inventor
SUH DONG CHAN
KR27 patents
Patents
27 patentsUS10361202B2Jul 23, 2019
Multigate metal-oxide semiconductor field effect transistor
SAMSUNG ELECTRONICS CO LTD15 citations94
US9761719B2Sep 12, 2017
Semiconductor device having silicon-germanium source/drain regions with varying germanium concentrations
SAMSUNG ELECTRONICS CO LTD19 citations92
US10872983B2Dec 22, 2020
Semiconductor devices and manufacturing methods thereof
SAMSUNG ELECTRONICS CO LTD9 citations84
US10319863B2Jun 11, 2019
Semiconductor device having a varying thickness nanowire channel and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US10056454B2Aug 21, 2018
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD13 citations84
US10008575B2Jun 26, 2018
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD13 citations84
US10211322B1Feb 19, 2019
Semiconductor device including channel pattern and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD12 citations83
US9502532B2Nov 22, 2016
Methods of manufacturing semiconductor devices
SAMSUNG ELECTRONICS CO LTD9 citations83
US11393929B2Jul 19, 2022
Semiconductor devices and manufacturing methods thereof
SAMSUNG ELECTRONICS CO LTD4 citations73
US11037926B2Jun 15, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations73
US10693017B2Jun 23, 2020
Semiconductor device having a multi-thickness nanowire
SAMSUNG ELECTRONICS CO LTD3 citations73
US10692993B2Jun 23, 2020
Semiconductor device and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US10014393B2Jul 3, 2018
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations73
US9240461B2Jan 19, 2016
Method for fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations73
US10008600B2Jun 26, 2018
Semiconductor device having silicon-germanium source/drain regions with varying germanium concentrations
SAMSUNG ELECTRONICS CO LTD3 citations72
US9608117B2Mar 28, 2017
Semiconductor devices including a finFET
SAMSUNG ELECTRONICS CO LTD4 citations72
US12225741B2Feb 11, 2025
Semiconductor device including source/drain having sidewalls with convex and concave portions
SAMSUNG ELECTRONICS CO LTD0 citations62
US12206026B2Jan 21, 2025
Semiconductor device including multi-thickness nanowires
SAMSUNG ELECTRONICS CO LTD0 citations62
US12142671B2Nov 12, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11908952B2Feb 20, 2024
Semiconductor devices and manufacturing methods thereof
SAMSUNG ELECTRONICS CO LTD0 citations62
US11728345B2Aug 15, 2023
Multi-gate metal-oxide-semiconductor field effect transistor
SAMSUNG ELECTRONICS CO LTD0 citations62
US11682735B2Jun 20, 2023
Semiconductor device including nanowires having multi-thickness regions
SAMSUNG ELECTRONICS CO LTD0 citations62
US11171224B2Nov 9, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11069685B2Jul 20, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11004985B2May 11, 2021
Semiconductor device having multi-thickness nanowire
SAMSUNG ELECTRONICS CO LTD0 citations62
US9530870B2Dec 27, 2016
Methods of fabricating a semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations61
US10776549B2Sep 15, 2020
Method of manufacturing a semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD0 citations38