Inventor
KANAYA HIROYUKI
JP66 patents
⚠️ This page may combine multiple inventors who share the name “KANAYA HIROYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
34 patentsUS6611014B1Aug 26, 2003
Semiconductor device having ferroelectric capacitor and hydrogen barrier film and manufacturing method thereof
TOSHIBA KK167 citations99
US5990507ANov 23, 1999
Semiconductor device having ferroelectric capacitor structures
TOSHIBA KK229 citations99
US6982453B2Jan 3, 2006
Semicondutor device having ferroelectric capacitor and hydrogen barrier film and manufacturing method thereof
TOSHIBA KK49 citations96
US6190957B1Feb 20, 2001
Method of forming a ferroelectric device
TOSHIBA KK70 citations96
US6847073B2Jan 25, 2005
Semiconductor device using ferroelectric film in cell capacitor, and method for fabricating the same
TOSHIBA KK25 citations93
US6642563B2Nov 4, 2003
Semiconductor memory including ferroelectric gate capacitor structure, and method of fabricating the same
TOSHIBA KK51 citations93
US7339218B2Mar 4, 2008
Semiconductor memory device and method of manufacturing the same
TOSHIBA KK23 citations92
US7022531B2Apr 4, 2006
Semiconductor memory device and method of fabricating the same
TOSHIBA KK18 citations92
US6982444B2Jan 3, 2006
Ferroelectric memory device having a hydrogen barrier film
TOSHIBA KK30 citations92
US6680499B2Jan 20, 2004
Semiconductor device and method of manufacturing the same
TOSHIBA KK20 citations92
US6677630B1Jan 13, 2004
Semiconductor device having ferroelectric film and manufacturing method thereof
TOSHIBA KK21 citations92
US6611015B2Aug 26, 2003
Semiconductor device including dummy upper electrode
TOSHIBA KK29 citations92
US6603161B2Aug 5, 2003
Semiconductor device having ferroelectric capacitor and method for manufacturing the same
TOSHIBA KK43 citations92
US6586790B2Jul 1, 2003
Semiconductor device and method for manufacturing the same
TOSHIBA KK32 citations92
US6521927B2Feb 18, 2003
Semiconductor device and method for the manufacture thereof
TOSHIBA KK41 citations92
US6303958B1Oct 16, 2001
Semiconductor integrated circuit and method for manufacturing the same
TOSHIBA KK34 citations92
US7504684B2Mar 17, 2009
Semiconductor device and manufacturing method therefor
TOSHIBA KK11 citations84
US7190015B2Mar 13, 2007
Semiconductor device and method of manufacturing the same
TOSHIBA KK14 citations84
US6855565B2Feb 15, 2005
Semiconductor device having ferroelectric film and manufacturing method thereof
TOSHIBA KK12 citations84
US6699726B2Mar 2, 2004
Semiconductor device and method for the manufacture thereof
TOSHIBA KK15 citations83
US7446362B2Nov 4, 2008
Semiconductor memory device and method of manufacturing the same
TOSHIBA KK8 citations74
US7402858B2Jul 22, 2008
Semiconductor memory device and method of manufacturing the same
TOSHIBA KK6 citations74
US7095068B2Aug 22, 2006
Semiconductor memory device having ferroelectric capacitor and method of manufacturing the same
TOSHIBA KK7 citations74
US6511877B2Jan 28, 2003
Semiconductor integrated circuit and method for manufacturing the same
TOSHIBA KK6 citations74
US6762065B2Jul 13, 2004
Semiconductor device having ferroelectric capacitor and method for manufacturing the same
TOSHIBA KK7 citations73
US7700987B2Apr 20, 2010
Ferroelectric memory device and method of manufacturing the same
TOSHIBA KK3 citations63
US7573120B2Aug 11, 2009
Semiconductor device and method of manufacturing the same
TOSHIBA KK2 citations63
US7501675B2Mar 10, 2009
Semiconductor device and method of manufacturing the same
TOSHIBA KK6 citations63
US7429508B2Sep 30, 2008
Semiconductor memory device and method of manufacturing the same
TOSHIBA KK3 citations63
US7400005B2Jul 15, 2008
Semiconductor memory device having ferroelectric capacitors with hydrogen barriers
TOSHIBA KK5 citations63
US7091538B2Aug 15, 2006
Semiconductor device and method for manufacturing the same
TOSHIBA KK3 citations63
US6972990B2Dec 6, 2005
Ferro-electric memory device and method of manufacturing the same
TOSHIBA KK2 citations63
US6750093B2Jun 15, 2004
Semiconductor integrated circuit and method for manufacturing the same
TOSHIBA KK5 citations63
US7045837B2May 16, 2006
Hardmask with high selectivity for Ir barriers for ferroelectric capacitor manufacturing
TOSHIBA KK5 citations59
KANAYA HIROYUKI
4 patentsUS9276195B2Mar 1, 2016
Magnetic random access memory
KANAYA HIROYUKI11 citations83
US9105572B2Aug 11, 2015
Magnetic memory and manufacturing method thereof
KANAYA HIROYUKI11 citations83
US8969983B2Mar 3, 2015
Semiconductor storage device and manufacturing method thereof
KANAYA HIROYUKI12 citations83
US8080841B2Dec 20, 2011
Semiconductor device having a ferroelectric capacitor and method of manufacturing the same
KANAYA HIROYUKI2 citations62
KIOXIA CORP
4 patentsUS11482572B2Oct 25, 2022
Semiconductor memory device with resistance change memory element and manufacturing method of semiconductor memory device with resistance change memory element
KIOXIA CORP1 citations63
US12471499B2Nov 11, 2025
Magnetic device and magnetic storage device
KIOXIA CORP0 citations59
US12200945B2Jan 14, 2025
Memory device
KIOXIA CORP0 citations52
US11895925B2Feb 6, 2024
Magnetic memory device having an electrode continuously provided on a wiring
KIOXIA CORP0 citations52
TOSHIBA MEMORY CORP
3 patentsUS10043852B2Aug 7, 2018
Magnetoresistive memory device and manufacturing method of the same
TOSHIBA MEMORY CORP6 citations73
US9887237B2Feb 6, 2018
Magnetic storage device
TOSHIBA MEMORY CORP3 citations72
US10115891B2Oct 30, 2018
Magnetoresistive memory device and manufacturing method of the same
TOSHIBA MEMORY CORP0 citations52
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
2 patentsIWAYAMA MASAYOSHI
1 patentPANASONIC IP CORP AMERICA
1 patentHOSOTANI KEIJI
1 patentShowing the top 50 of 66 patents by PatentIndex Score.