Inventor
KATOU HIROAKI
JP44 patents
⚠️ This page may combine multiple inventors who share the name “KATOU HIROAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
32 patentsUS11239231B2Feb 1, 2022
Semiconductor device
TOSHIBA KK2 citations73
US11239357B2Feb 1, 2022
Semiconductor device
TOSHIBA KK4 citations73
US10340346B2Jul 2, 2019
Semiconductor device
TOSHIBA KK2 citations73
US11127854B2Sep 21, 2021
Semiconductor device and method of manufacturing same
TOSHIBA KK4 citations72
US10840368B2Nov 17, 2020
Semiconductor device
TOSHIBA KK3 citations72
US10319850B2Jun 11, 2019
Semiconductor device and manufacturing method of semiconductor device
TOSHIBA KK4 citations72
US9842924B2Dec 12, 2017
Semiconductor device having an electrode that is in a peripheral trench region and at a same potential as a source electrode
TOSHIBA KK3 citations72
US9559057B1Jan 31, 2017
Semiconductor device and method for manufacturing the same
TOSHIBA KK2 citations67
US12302602B2May 13, 2025
Semiconductor device
TOSHIBA KK1 citations63
US11715793B2Aug 1, 2023
Semiconductor device and method of manufacturing same
TOSHIBA KK0 citations62
US11705447B2Jul 18, 2023
Semiconductor device
TOSHIBA KK0 citations62
US11495679B2Nov 8, 2022
Semiconductor device and method for manufacturing the same
TOSHIBA KK0 citations62
US11164968B2Nov 2, 2021
Semiconductor device and method for manufacturing the same
TOSHIBA KK0 citations62
US11996458B2May 28, 2024
Trench-gate MOS transistor and method for manufacturing the same
TOSHIBA KK0 citations61
US11251278B2Feb 15, 2022
Trench-gate MOS transistor and method for manufacturing
TOSHIBA KK0 citations61
US12381155B2Aug 5, 2025
Semiconductor device
TOSHIBA KK0 citations52
US11626514B2Apr 11, 2023
Trench vertical power MOSFET with channel including regions with different concentrations
TOSHIBA KK0 citations52
US11177381B2Nov 16, 2021
Semiconductor device and method for manufacturing same
TOSHIBA KK0 citations52
US12439675B2Oct 7, 2025
Semiconductor device and method for manufacturing the same
TOSHIBA KK0 citations51
US12363984B2Jul 15, 2025
Trench-gate power MOSFET with buried field plates
TOSHIBA KK0 citations51
US12094968B2Sep 17, 2024
Semiconductor device and method for manufacturing same
TOSHIBA KK0 citations51
US11862698B2Jan 2, 2024
Semiconductor device and method of manufacturing semiconductor device
TOSHIBA KK0 citations51
US11640991B2May 2, 2023
Semiconductor device and method for manufacturing the same
TOSHIBA KK0 citations51
US11462637B2Oct 4, 2022
Semiconductor device and manufacturing method for the same
TOSHIBA KK0 citations51
US10971621B2Apr 6, 2021
Semiconductor device
TOSHIBA KK0 citations51
US10103222B2Oct 16, 2018
Semiconductor device
TOSHIBA KK1 citations51
US11942539B2Mar 26, 2024
Semiconductor device
TOSHIBA KK0 citations50
US11688803B2Jun 27, 2023
Semiconductor device
TOSHIBA KK0 citations50
US10903202B2Jan 26, 2021
Semiconductor device
TOSHIBA KK0 citations50
US9660071B2May 23, 2017
Semiconductor device
TOSHIBA KK1 citations48
US10872975B2Dec 22, 2020
Semiconductor device
TOSHIBA KK0 citations41
US10529805B2Jan 7, 2020
Semiconductor device
TOSHIBA KK0 citations41
RENESAS ELECTRONICS CORP
8 patentsUS9082835B2Jul 14, 2015
Semiconductor device, manufacturing method thereof, electronic device and vehicle
RENESAS ELECTRONICS CORP5 citations83
US9601351B2Mar 21, 2017
Method of manufacturing a semiconductor device
RENESAS ELECTRONICS CORP2 citations72
US7981754B2Jul 19, 2011
Manufacturing method of bonded SOI substrate and manufacturing method of semiconductor device
RENESAS ELECTRONICS CORP3 citations62
US9362396B2Jun 7, 2016
Semiconductor device, manufacturing method thereof, electronic device and vehicle
RENESAS ELECTRONICS CORP0 citations51
US9184285B2Nov 10, 2015
Semiconductor device with gate electrodes buried in trenches
RENESAS ELECTRONICS CORP1 citations50
US8969150B2Mar 3, 2015
Semiconductor device and method for manufacturing the same
RENESAS ELECTRONICS CORP0 citations50
US8803226B2Aug 12, 2014
Semiconductor device and method for manufacturing the same
RENESAS ELECTRONICS CORP0 citations50
US9029953B2May 12, 2015
Semiconductor device and manufacturing method thereof
RENESAS ELECTRONICS CORP0 citations39