P

Inventor

YANG JUNGGIL

KR29 patents

Patents

29 patents
US9466601B2Oct 11, 2016

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD14 citations92
US10749030B2Aug 18, 2020

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD6 citations83
US11710739B2Jul 25, 2023

Integrated circuit device

SAMSUNG ELECTRONICS CO LTD8 citations82
US9362397B2Jun 7, 2016

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD11 citations82
US10090328B2Oct 2, 2018

Semiconductor device

SAMSUNG ELECTRONICS CO LTD2 citations73
US11233122B2Jan 25, 2022

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD4 citations72
US11211495B2Dec 28, 2021

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD3 citations72
US11024741B2Jun 1, 2021

Integrated circuits and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD4 citations72
US10714617B2Jul 14, 2020

Semiconductor device

SAMSUNG ELECTRONICS CO LTD1 citations72
US10177150B2Jan 8, 2019

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations72
US9711506B2Jul 18, 2017

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD4 citations72
US12382653B2Aug 5, 2025

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations62
US12300751B2May 13, 2025

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11784256B2Oct 10, 2023

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations62
US11637205B2Apr 25, 2023

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
US10916658B2Feb 9, 2021

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11961914B2Apr 16, 2024

Integrated circuit devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US11894463B2Feb 6, 2024

Integrated circuits and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US11699759B2Jul 11, 2023

Integrated circuit devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD1 citations61
US11695041B2Jul 4, 2023

Method of manufacturing a semiconductor device

SAMSUNG ELECTRONICS CO LTD1 citations61
US11563121B2Jan 24, 2023

Integrated circuits and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US11227952B2Jan 18, 2022

Integrated circuit devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US12563827B2Feb 24, 2026

Semiconductor device including a field effect transistor and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations59
US12433017B2Sep 30, 2025

Integrated circuit device including N-channel metal-oxide semiconductor (NMOS) transistor region and a P-channel metal-oxide semiconductor (PMOS) transistor region

SAMSUNG ELECTRONICS CO LTD0 citations59
US12040326B2Jul 16, 2024

Method of manufacturing an integrated circuit device

SAMSUNG ELECTRONICS CO LTD0 citations59
US12027523B2Jul 2, 2024

Semiconductor device including a field effect transistor and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations59
US12183796B2Dec 31, 2024

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations51
US12211942B2Jan 28, 2025

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations50
US12408391B2Sep 2, 2025

Display device including a sensing layer for sensing an external input device and method of drving the same

SAMSUNG ELECTRONICS CO LTD0 citations47