P

Inventor

MATSUDA SATOSHI

JP69 patents
⚠️ This page may combine multiple inventors who share the name “MATSUDA SATOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOSHIBA KK

17 patents
US7009273B2Mar 7, 2006

Semiconductor device with a cavity therein and a method of manufacturing the same

TOSHIBA KK92 citations97
US5620908AApr 15, 1997

Manufacturing method of semiconductor device comprising BiCMOS transistor

TOSHIBA KK80 citations95
US6649462B2Nov 18, 2003

Semiconductor device and method of manufacturing the same including T-shaped gate

TOSHIBA KK17 citations92
US6642581B2Nov 4, 2003

Semiconductor device comprising buried channel region

TOSHIBA KK39 citations92
US6515320B1Feb 4, 2003

Semiconductor device and method of manufacturing the same including thicker insulating layer on lower part of electrode

TOSHIBA KK36 citations92
US5898203AApr 27, 1999

Semiconductor device having solid phase diffusion sources

TOSHIBA KK29 citations92
US5434440AJul 18, 1995

Semiconductor device and method of manufacturing the same

TOSHIBA KK35 citations92
US5903027AMay 11, 1999

MOSFET with solid phase diffusion source

TOSHIBA KK20 citations91
US7564093B2Jul 21, 2009

Semiconductor device

TOSHIBA KK9 citations84
US7332380B2Feb 19, 2008

Pattern design method and program of a semiconductor device including dummy patterns

TOSHIBA KK12 citations84
US5698881ADec 16, 1997

MOSFET with solid phase diffusion source

TOSHIBA KK17 citations81
US6841429B2Jan 11, 2005

Method of manufacturing a semiconductor device having a silicide film

TOSHIBA KK10 citations74
US7145215B2Dec 5, 2006

Semiconductor device with a cavity therein and a method of manufacturing the same

TOSHIBA KK7 citations73
US7183168B2Feb 27, 2007

Method of manufacturing a semiconductor device having a silicide film

TOSHIBA KK2 citations63
US6677660B1Jan 13, 2004

Semiconductor device having silicide film

TOSHIBA KK1 citations63
US8017510B2Sep 13, 2011

Semiconductor device including field-effect transistor using salicide (self-aligned silicide) structure and method of fabricating the same

TOSHIBA KK0 citations52
US7265400B2Sep 4, 2007

Semiconductor device including field-effect transistor using salicide (self-aligned silicide) structure and method of fabricating the same

TOSHIBA KK1 citations52

NAGASAWA HIROYUKI

4 patents

HITACHI AUTOMOTIVE SYSTEMS LTD

4 patents

OTSUKA PHARMA CO LTD

4 patents

HITACHI ASTEMO LTD

3 patents

MITSUBISHI HEAVY IND LTD

2 patents

IDEMITSU KOSAN CO

2 patents

MURATA MANUFACTURING CO

2 patents

MATSUDA SATOSHI

2 patents

JTEKT CORP

2 patents

TOKAI RYOKAKU TETSUDO KK

1 patent

TOKYO SHIBAURA ELECTRIC CO

1 patent

FUJITSU LTD

1 patent

(unassigned)

1 patent

TBM CO LTD

1 patent

3M INNOVATIVE PROPERTIES COMPANY

1 patent

MITSUBISHI NICHIYU FORKLIFT CO

1 patent

TOYOTA MOTOR CO LTD

1 patent

Showing the top 50 of 69 patents by PatentIndex Score.