Inventor
ZHAO DONGXUE
CN18 patents
⚠️ This page may combine multiple inventors who share the name “ZHAO DONGXUE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
YANGTZE MEMORY TECH CO LTD
17 patentsUS12520486B2Jan 6, 2026
Memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD1 citations64
US12262533B2Mar 25, 2025
Dynamic flash memory (DFM) with multi-cells
YANGTZE MEMORY TECH CO LTD1 citations64
US12597468B2Apr 7, 2026
Three-dimensional memory devices and fabricating methods thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US12557299B2Feb 17, 2026
Three-dimensional memory devices and fabricating methods thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US12444679B2Oct 14, 2025
Three-dimensional memory devices having a cylindrical body and plate line contact segments
YANGTZE MEMORY TECH CO LTD0 citations62
US12439584B2Oct 7, 2025
Dynamic flash memory (DFM) with ring-type insulator in channel for improved retention
YANGTZE MEMORY TECH CO LTD0 citations62
US12406928B2Sep 2, 2025
Three-dimensional memory devices and fabricating methods thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US12327592B2Jun 10, 2025
Vertical memory devices and methods for operating the same
YANGTZE MEMORY TECH CO LTD0 citations62
US12328867B2Jun 10, 2025
Memory devices having vertical transistors and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US12274049B2Apr 8, 2025
Memory devices having vertical transistors and stacked storage units and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US12272645B2Apr 8, 2025
Three-dimensional memory devices and fabricating methods thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US12127393B2Oct 22, 2024
Memory devices having vertical transistors and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US12027207B2Jul 2, 2024
Vertical memory devices and methods for operating the same
YANGTZE MEMORY TECH CO LTD0 citations62
US12464728B2Nov 4, 2025
Memory devices having vertical transistors and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations52
US12317496B2May 27, 2025
Memory and controlling method thereof, memory system and electronic device
YANGTZE MEMORY TECH CO LTD0 citations52
US12205649B2Jan 21, 2025
Non-volatile memory devices and data erasing methods
YANGTZE MEMORY TECH CO LTD0 citations52
US12082399B2Sep 3, 2024
Memory devices having vertical transistors in staggered layouts
YANGTZE MEMORY TECH CO LTD0 citations52