P

Inventor

YANG YUANCHENG

CN40 patents
⚠️ This page may combine multiple inventors who share the name “YANG YUANCHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YANGTZE MEMORY TECH CO LTD

37 patents
US11935596B2Mar 19, 2024

Three-dimensional memory devices having polysilicon layer and bonded semiconductor structures and methods for forming the same

YANGTZE MEMORY TECH CO LTD4 citations75
US11929119B2Mar 12, 2024

Three-dimensional memory devices and memory system

YANGTZE MEMORY TECH CO LTD3 citations75
US12082408B2Sep 3, 2024

Three-dimensional memory devices having first semiconductor structure bonded with second semiconductor structure each including peripheral circuit and methods for forming the same

YANGTZE MEMORY TECH CO LTD2 citations73
US12075621B2Aug 27, 2024

Three-dimensional memory device and method for forming the same

YANGTZE MEMORY TECH CO LTD2 citations73
US12020750B2Jun 25, 2024

Three-dimensional memory devices

YANGTZE MEMORY TECH CO LTD2 citations73
US12520486B2Jan 6, 2026

Memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD1 citations64
US12262533B2Mar 25, 2025

Dynamic flash memory (DFM) with multi-cells

YANGTZE MEMORY TECH CO LTD1 citations64
US12191269B2Jan 7, 2025

Three-dimensional memory device and method for forming the same

YANGTZE MEMORY TECH CO LTD1 citations64
US12597468B2Apr 7, 2026

Three-dimensional memory devices and fabricating methods thereof

YANGTZE MEMORY TECH CO LTD0 citations62
US12557299B2Feb 17, 2026

Three-dimensional memory devices and fabricating methods thereof

YANGTZE MEMORY TECH CO LTD0 citations62
US12444679B2Oct 14, 2025

Three-dimensional memory devices having a cylindrical body and plate line contact segments

YANGTZE MEMORY TECH CO LTD0 citations62
US12439584B2Oct 7, 2025

Dynamic flash memory (DFM) with ring-type insulator in channel for improved retention

YANGTZE MEMORY TECH CO LTD0 citations62
US12412628B2Sep 9, 2025

Methods for forming three-dimensional memory devices

YANGTZE MEMORY TECH CO LTD0 citations62
US12406928B2Sep 2, 2025

Three-dimensional memory devices and fabricating methods thereof

YANGTZE MEMORY TECH CO LTD0 citations62
US12327592B2Jun 10, 2025

Vertical memory devices and methods for operating the same

YANGTZE MEMORY TECH CO LTD0 citations62
US12328867B2Jun 10, 2025

Memory devices having vertical transistors and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US12322596B2Jun 3, 2025

Methods for thermal treatment of a semiconductor layer in semiconductor device

YANGTZE MEMORY TECH CO LTD0 citations62
US12278209B2Apr 15, 2025

Peripheral circuit having recess gate transistors and method for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US12272645B2Apr 8, 2025

Three-dimensional memory devices and fabricating methods thereof

YANGTZE MEMORY TECH CO LTD0 citations62
US12127393B2Oct 22, 2024

Memory devices having vertical transistors and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US12089413B2Sep 10, 2024

Peripheral circuit having recess gate transistors and method for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US12082407B2Sep 3, 2024

Three-dimensional memory device and method for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US12069854B2Aug 20, 2024

Three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD1 citations62
US12027207B2Jul 2, 2024

Vertical memory devices and methods for operating the same

YANGTZE MEMORY TECH CO LTD0 citations62
US12193230B2Jan 7, 2025

Three-dimensional memory device and method for forming the same

YANGTZE MEMORY TECH CO LTD0 citations60
US12525558B2Jan 13, 2026

Three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations52
US12451452B2Oct 21, 2025

Three-dimensional memory and fabrication method thereof

YANGTZE MEMORY TECH CO LTD0 citations52
US12388036B2Aug 12, 2025

Three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations52
US12388037B2Aug 12, 2025

Three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations52
US12300648B2May 13, 2025

Three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations52
US12274055B2Apr 8, 2025

Control gate structures in three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations52
US12176309B2Dec 24, 2024

Three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations52
US12170257B2Dec 17, 2024

Three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations52
US12113037B2Oct 8, 2024

Three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations52
US12082399B2Sep 3, 2024

Memory devices having vertical transistors in staggered layouts

YANGTZE MEMORY TECH CO LTD0 citations52
US11996152B2May 28, 2024

Three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations52
US12490432B2Dec 2, 2025

Method of fabricating a semiconductor device using laser annealing

YANGTZE MEMORY TECH CO LTD0 citations49

UNIV BEIJING

3 patents