Inventor
YANG YUANCHENG
CN40 patents
⚠️ This page may combine multiple inventors who share the name “YANG YUANCHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
YANGTZE MEMORY TECH CO LTD
37 patentsUS11935596B2Mar 19, 2024
Three-dimensional memory devices having polysilicon layer and bonded semiconductor structures and methods for forming the same
YANGTZE MEMORY TECH CO LTD4 citations75
US11929119B2Mar 12, 2024
Three-dimensional memory devices and memory system
YANGTZE MEMORY TECH CO LTD3 citations75
US12082408B2Sep 3, 2024
Three-dimensional memory devices having first semiconductor structure bonded with second semiconductor structure each including peripheral circuit and methods for forming the same
YANGTZE MEMORY TECH CO LTD2 citations73
US12075621B2Aug 27, 2024
Three-dimensional memory device and method for forming the same
YANGTZE MEMORY TECH CO LTD2 citations73
US12020750B2Jun 25, 2024
Three-dimensional memory devices
YANGTZE MEMORY TECH CO LTD2 citations73
US12520486B2Jan 6, 2026
Memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD1 citations64
US12262533B2Mar 25, 2025
Dynamic flash memory (DFM) with multi-cells
YANGTZE MEMORY TECH CO LTD1 citations64
US12191269B2Jan 7, 2025
Three-dimensional memory device and method for forming the same
YANGTZE MEMORY TECH CO LTD1 citations64
US12597468B2Apr 7, 2026
Three-dimensional memory devices and fabricating methods thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US12557299B2Feb 17, 2026
Three-dimensional memory devices and fabricating methods thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US12444679B2Oct 14, 2025
Three-dimensional memory devices having a cylindrical body and plate line contact segments
YANGTZE MEMORY TECH CO LTD0 citations62
US12439584B2Oct 7, 2025
Dynamic flash memory (DFM) with ring-type insulator in channel for improved retention
YANGTZE MEMORY TECH CO LTD0 citations62
US12412628B2Sep 9, 2025
Methods for forming three-dimensional memory devices
YANGTZE MEMORY TECH CO LTD0 citations62
US12406928B2Sep 2, 2025
Three-dimensional memory devices and fabricating methods thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US12327592B2Jun 10, 2025
Vertical memory devices and methods for operating the same
YANGTZE MEMORY TECH CO LTD0 citations62
US12328867B2Jun 10, 2025
Memory devices having vertical transistors and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US12322596B2Jun 3, 2025
Methods for thermal treatment of a semiconductor layer in semiconductor device
YANGTZE MEMORY TECH CO LTD0 citations62
US12278209B2Apr 15, 2025
Peripheral circuit having recess gate transistors and method for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US12272645B2Apr 8, 2025
Three-dimensional memory devices and fabricating methods thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US12127393B2Oct 22, 2024
Memory devices having vertical transistors and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US12089413B2Sep 10, 2024
Peripheral circuit having recess gate transistors and method for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US12082407B2Sep 3, 2024
Three-dimensional memory device and method for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US12069854B2Aug 20, 2024
Three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD1 citations62
US12027207B2Jul 2, 2024
Vertical memory devices and methods for operating the same
YANGTZE MEMORY TECH CO LTD0 citations62
US12193230B2Jan 7, 2025
Three-dimensional memory device and method for forming the same
YANGTZE MEMORY TECH CO LTD0 citations60
US12525558B2Jan 13, 2026
Three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations52
US12451452B2Oct 21, 2025
Three-dimensional memory and fabrication method thereof
YANGTZE MEMORY TECH CO LTD0 citations52
US12388036B2Aug 12, 2025
Three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations52
US12388037B2Aug 12, 2025
Three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations52
US12300648B2May 13, 2025
Three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations52
US12274055B2Apr 8, 2025
Control gate structures in three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations52
US12176309B2Dec 24, 2024
Three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations52
US12170257B2Dec 17, 2024
Three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations52
US12113037B2Oct 8, 2024
Three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations52
US12082399B2Sep 3, 2024
Memory devices having vertical transistors in staggered layouts
YANGTZE MEMORY TECH CO LTD0 citations52
US11996152B2May 28, 2024
Three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations52
US12490432B2Dec 2, 2025
Method of fabricating a semiconductor device using laser annealing
YANGTZE MEMORY TECH CO LTD0 citations49
UNIV BEIJING
3 patentsUS9502310B1Nov 22, 2016
Integration method for a vertical nanowire transistor
UNIV BEIJING4 citations73
US9425060B2Aug 23, 2016
Method for fabricating multiple layers of ultra narrow silicon wires
UNIV BEIJING0 citations38
US9349588B2May 24, 2016
Method for fabricating quasi-SOI source/drain field effect transistor device
UNIV BEIJING0 citations38